Abstract: Disclosed herein is a once-through heat exchanger that includes a tube stack including a plurality of tubes, a plurality of heads connected to the tube stack via a connection module and configured to accommodate heated steam, the connector module comprising a plurality of tube connectors and configured to connect the tubes and the heads, and a manifold connected to the heads via a plurality of link pipes and configured to accommodate heated steam, wherein the connector module comprises a first tube connector and a second tube connector having different shapes.

Abstract: Proposed is a connection tube support of a waste heat recovery boiler supporting a connection tube unit having a plurality of connection tubes that is disposed inside a waste heat recovery boiler and perform heat exchange between a fluid flowing inside and exhaust gas flowing outside, wherein the connection tube support includes a header storing fluid flowing through the connection tube unit and supporting one end of the connection tube unit by being connected to one end of the connection tube unit, and a tube sheet supporting a circumferential surface of each of the plurality of connection tubes, wherein the tube sheet has the plurality of connection tubes having been passed therethrough and is provided with a plurality of support holes respectively supporting circumferential surfaces of the plurality of connection tubes having been passed therethrough.

Abstract: Proposed is a connection tube support of a waste heat recovery boiler supporting a connection tube unit having a plurality of connection tubes that is disposed inside a waste heat recovery boiler and perform heat exchange between a fluid flowing inside and exhaust gas flowing outside, wherein the connection tube support includes a header storing fluid flowing through the connection tube unit and supporting one end of the connection tube unit by being connected to one end of the connection tube unit, and a tube sheet supporting a circumferential surface of each of the plurality of connection tubes, wherein the tube sheet has the plurality of connection tubes having been passed therethrough and is provided with a plurality of support holes respectively supporting circumferential surfaces of the plurality of connection tubes having been passed therethrough.

Abstract: Disclosed herein is a once-through heat exchanger that includes a tube stack including a plurality of tubes, a plurality of heads connected to the tube stack via a connection module and configured to accommodate heated steam, the connector module comprising a plurality of tube connectors and configured to connect the tubes and the heads, and a manifold connected to the heads via a plurality of link pipes and configured to accommodate heated steam, wherein the connector module comprises a first tube connector and a second tube connector having different shapes.

Abstract: An electronic device and an operation method thereof, according to various embodiments, may: receive first data and second data compressed in a designated compression scheme; decompress the received first data and the received second data on the basis of at least the designated compression scheme; decrypt the decompressed second data; detect success of the decryption; and reproduce the decompressed first data and the decrypted second data.

Abstract: An electronic device and an operation method thereof, according to various embodiments, may: receive first data and second data compressed in a designated compression scheme; decompress the received first data and the received second data on the basis of at least the designated compression scheme; decrypt the decompressed second data; detect success of the decryption; and reproduce the decompressed first data and the decrypted second data.

Abstract: An electronic device and an operation method thereof, according to various embodiments, may: receive first data and second data compressed in a designated compression scheme; decompress the received first data and the received second data on the basis of at least the designated compression scheme; decrypt the decompressed second data; detect success of the decryption; and reproduce the decompressed first data and the decrypted second data.

Abstract: A method for fabricating a semiconductor device includes etching a substrate to form a plurality of bodies isolated by a first trench, forming a buried bit line gap-filling a portion of the first trench, etching the top portions of the bodies to form a plurality of pillars isolated by a plurality of second trenches extending across the first trench, forming a passivation layer gap-filling a portion of the second trenches, forming an isolation layer that divides each of the second trenches into isolation trenches over the passivation layer, and filling a portion of the isolation trenches to form a buried word line extending in a direction crossing over the buried bit line.

Abstract: A method for fabricating a semiconductor device includes forming a first trench by etching a substrate, forming first spacers on sidewalls of the first trench, forming a second trench by etching the substrate under the first trench, forming second spacers on sidewalls of the second trench, forming a third trench, which has a wider width than a width between the second spacers, by etching the substrate under the second trench, forming a liner layer on the surface of the third trench, and exposing one of the sidewalls of the second trench by selectively removing the second spacers.

Abstract: A method for fabricating a semiconductor device includes etching a substrate to form a plurality of bodies isolated by a first trench, forming a buried bit line gap-filling a portion of the first trench, etching the top portions of the bodies to form a plurality of pillars isolated by a plurality of second trenches extending across the first trench, forming a passivation layer gap-filling a portion of the second trenches, forming an isolation layer that divides each of the second trenches into isolation trenches over the passivation layer, and filling a portion of the isolation trenches to form a buried word line extending in a direction crossing over the buried bit line.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate using a hard mask layer as a barrier to form a trench defining a plurality of active regions, forming a gap-fill layer to gap-fill a portion of the inside of the trench so that the hard mask layer becomes a protrusion, forming spacers covering both sides of the protrusion, removing one of the spacers using a doped etch barrier as an etch barrier, and etching the gap-fill layer using a remaining spacer as an etch barrier to form a side trench exposing one side of the active region.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate using a hard mask layer as a barrier to form a trench defining a plurality of active regions, forming a gap-fill layer to gap-fill a portion of the inside of the trench so that the hard mask layer becomes a protrusion, forming spacers covering both sides of the protrusion, removing one of the spacers using a doped etch barrier as an etch barrier, and etching the gap-fill layer using a remaining spacer as an etch barrier to form a side trench exposing one side of the active region.