Patents by Inventor Ulf Burker

Ulf Burker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making MOS device using metal silicides or polysilicon for gates and impurity source for active regions
    Patent number: 4505027
    Abstract: The invention relates to a method for producing MOS transistors with flat source/drain zones, short channel lengths, and a self aligned contacting plane comprised of a metal silicide. In this method, the source/drain zones in the semiconductor substrate are produced by out-diffusion of the contacting plane consisting of a doped metal silicide and deposited directly on the substrate. The method serves to produce NMOS, PMOS, and in particular CMOS circuits in VLSI technology and permits a very high packing density and an independent additional wiring plane of very low resistance.
    Type: Grant
    Filed: January 30, 1984
    Date of Patent: March 19, 1985
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ulrich Schwabe, Franz Neppl, Ulf Burker, Werner Christoph