Abstract: A method and system are provided for adapting a vehicle control strategy of an on-road vehicle following a reoccurring fixed route to a predetermined destination, which fixed route extends through at least one geographical zone associated with at least one environmental restriction. When it is determined that the vehicle is approaching the geographical zone, historical data collected from previous passages of one or several vehicles through the zone is accessed, and the vehicle control strategy inside the geographical zone is adapted based on the historical data and the environmental restriction.

Abstract: A method and system are provided for adapting a vehicle control strategy of an on-road vehicle following a reoccurring fixed route to a predetermined destination, which fixed route extends through at least one geographical zone associated with at least one environmental restriction. When it is determined that the vehicle is approaching the geographical zone, historical data collected from previous passages of one or several vehicles through the zone is accessed, and the vehicle control strategy inside the geographical zone is adapted based on the historical data and the environmental restriction.

Abstract: A method and system are provided for adapting a vehicle control strategy of an on-road vehicle following a reoccurring fixed route to a predetermined destination, which fixed route extends through at least one geographical zone associated with at least one environmental restriction. When it is determined that the vehicle is approaching the geographical zone, historical data collected from previous passages of one or several vehicles through the zone is accessed, and the vehicle control strategy inside the geographical zone is adapted based on the historical data and the environmental restriction.

Abstract: A method and system are provided for adapting a vehicle control strategy of an on-road vehicle following a reoccurring fixed route to a predetermined destination, which fixed route extends through at least one geographical zone associated with at least one environmental restriction. When it is determined that the vehicle is approaching the geographical zone, historical data collected from previous passages of one or several vehicles through the zone is accessed, and the vehicle control strategy inside the geographical zone is adapted based on the historical data and the environmental restriction.

Abstract: A non-invasive analysis system includes data collecting units and an analysis unit adapted to quantify and visualize ventricular rotation patterns of the heart. The data collecting units register rotational information about the cardiac movement for a number of time points and levels in the heart throughout the cardiac cycle. The analysis unit calculates rotation planes for different levels in the heart over time and constructs rotation planes from at least two rotation lines originating from the same level in the heart. Each of the rotation lines are created between a pair of points having matching rotation values located in ventricular walls, and to calculate a rotation axis for the rotation plane for each selected level. The analysis unit creates a model of the rotational pattern of the heart. Deflection and direction of the rotation axes for the rotation planes at selected levels of the ventricles are quantified and visualized.

Abstract: A method of contrast enhancement for improved visualization of diagnostically important tissue structures, such as blood vessels. A texture analysis algorithm is applied to identify regions with a high likelihood of disease. Mathematical morphology operations are applied to identify areas of high and low brightness (intensity). The low intensity areas are then subtracted, and controllably variable amounts of the high intensity areas are added, controlled by a selectable tuning parameter, to produce an image with controllably variable visualization enhancement.

Abstract: A non-invasive analysis system includes data collecting units and an analysis unit adapted to quantify and visualize ventricular rotation patterns of the heart. The data collecting units register rotational information about the cardiac movement for a number of time points and levels in the heart throughout the cardiac cycle. The analysis unit calculates rotation planes for different levels in the heart over time and constructs rotation planes from at least two rotation lines originating from the same level in the heart. Each of the rotation lines are created between a pair of points having matching rotation values located in ventricular walls, and to calculate a rotation axis for the rotation plane for each selected level. The analysis unit creates a model of the rotational pattern of the heart. Deflection and direction of the rotation axes for the rotation planes at selected levels of the ventricles are quantified and visualized.

Abstract: A method of automated image calibration that corrects for non-uniform illumination and calibrates color that is simple, fast, automated, accurate and reliable. A gray balance algorithm is applied to correct for non-uniform illumination and a color calibration algorithm is then applied to calibrate the human subject data. The system has been applied in multiple clinical sites with different instruments.

Abstract: A method of contrast enhancement for improved visualization of diagnostically important tissue structures, such as blood vessels. A texture analysis algorithm is applied to identify regions with a high likelihood of disease. Mathematical morphology operations are applied to identify areas of high and low brightness (intensity). The low intensity areas are then subtracted, and controllably variable amounts of the high intensity areas are added, controlled by a selectable tuning parameter, to produce an image with controllably variable visualization enhancement.

Abstract: A method of automated image calibration that corrects for non-uniform illumination and calibrates color that is simple, fast, automated, accurate and reliable. A gray balance algorithm is applied to correct for non-uniform illumination and a color calibration algorithm is then applied to calibrate the human subject data. The system has been applied in multiple clinical sites with different instruments.

Abstract: The image registration systems and methods according to this invention register reflectance and fluorescence hyperspectral imagery and provide the spatial image transformation between the reflectance and fluorescence hyperspectral imagery. A reflectance image is embedded into the fluorescence hyperspectral imagery and thereby resolves the resemblance problem of reflectance and fluorescence hyperspectral imagery. The reflectance image is embedded into the fluorescence hyperspectral imagery using (1) light from a narrow-band source embedded in Ultraviolet (UV) excitation light, (2) second order diffracted light, and/or (3) Ultraviolet (UV) excitation light reflectance. Resembling reflectance images are calculated from the reflectance hyperspectral imagery and the embedded reflectance image in the fluorescence hyperspectral imagery. The two respective reflectance images are pre-processed to maximize the resemblance between them.

Abstract: A semiconductor device of planar structure has a pn-junction (10) formed by a first layer (1) doped according to a first conductivity type, n or p, and on top thereof a second layer (2) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones (4) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border (8) of the edge termination. A third layer (5) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.

Abstract: A semiconductor device of planar structure has a pn-junction (10) formed by a first layer (1) doped according to a first conductivity type, n or p, and on top thereof a second layer (2) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones (4) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border (8) of the edge termination. A third layer (5) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.

Abstract: A semiconductor diode structure comprising a Schottky junction, where a metal contact and a silicon carbide semiconducting layer of a first conducting type form said junction and where the edge of the junction exhibits a Junction Termination Extension (JTE) laterally surrounding the junction, said JTE having a charge profile with a stepwise or uniformly decreasing total charge or effective sheet charge density from an initial value to a zero or almost zero total charge at the outermost edge of the termination following a radial direction from the centre part of the JTE towards the outermost edge of the termination. The object of the junction termination extension is to control the electric field at the periphery of the diode.

Abstract: A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.

Abstract: A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.

Abstract: A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract: A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

Abstract: A semiconductor component including a silicon carbide substrate. A pn junction includes doped layers of the substrate. The pn junction includes at a surface of the substrate a low doped first conductivity type layer and at a portion of the surface of the substrate a highly doped second conductivity type layer. An edge termination region of the pn junction laterally surrounds the pn junction provided at an edge of at least one of the layers of the pn junction. The edge termination region includes zones of the second conductivity type located at an edge of the highly doped second conductivity type layer. A charge content of the zones decreases toward an edge of the edge termination region in accordance with at least one characteristic selected from the group consisting of a stepwise or continuously decreasing total charge towards an outer border of the edge termination region and a decreasing effective sheet charge density toward an outer border of the edge termination region.