Abstract: A method (200) for monitoring process conditions in a plasma PVD process as well as a method (300) for controlling a plasma PVD process are disclosed. The methods are performed in an apparatus (1) configured therefore. In accordance with the methods, an oscillating voltage signal is applied to a target (3), arranged in the apparatus (1), by means of a radio frequency generator 15). The response from the applied oscillating voltage signal is recorded by means of a radio frequency sensor (16). Based on the recorded response, information regarding at least one plasma process condition is derived. A computer program and a computer-readable medium are also disclosed.

Abstract: A process for producing magnetic nanowires of high quality and a good production yield is disclosed. The process comprises sputtering a target of a magnetic material using a plasma, growing nanoparticles from the sputtered matter to magnetic nanoparticles and collecting the magnetic nanoparticles on a substrate in the form of nanowires.

Abstract: An ion thruster (1) and a method for providing trust is disclosed. The ion thruster comprises a sputtering magnetron (2), a target (3) arranged at the sputtering magnetron, and a second electrode (4). During a first pulse, the target is at a negative potential (UHiP) with respect to a second electrode and a plasma is sustained whereby atoms are sputtered from the target and at least a portion thereof become ionised by the plasma. During a second pulse, a reversed potential (Urev) is applied between the target and the second electrode. This increases the potential of a volume of the plasma adjacent to the target, which in turn accelerates ions in a direction away from the target. Thereby, thrust is provided. The disclosure further relates to a computer program and a computer readable medium, as well as a spacecraft comprising the ion thruster.

Abstract: A process for producing magnetic nanowires of high quality and a good production yield is disclosed. The process comprises sputtering a target of a magnetic material using a plasma, growing nanoparticles from the sputtered matter to magnetic nanoparticles and collecting the magnetic nanoparticles on a substrate in the form of nanowires.

Abstract: A high production rate plasma sputtering process for producing particles having a size of 10 ?m or less is disclosed. The process causes ionization of at least a part of the sputtered target atoms and is performed at such parameters that the pick-up probability of ionized sputtered target atoms on the surface of grains is high.

Abstract: The sputtering process according to the present disclosure comprises providing a target consisting of carbon in a sputtering apparatus, introducing a process gas essentially consisting of a neon or a gas mixture comprising at least 60% neon into said apparatus, applying a pulsed power discharge to said target in order to create a plasma of said process gas, sputtering said target by means of said plasma. The process is able to ionize a significant amount of sputtered carbon atoms.

Abstract: The present invention relates to a method of producing coatings of metal oxide, nitride or carbide or mixtures thereof, whereby operating a High Power Impulse Magnetron Sputtering, HIPIMS, discharged on one or more target (s) (3), in an argon and reactive gas mixture (5, 6), at peak pulse power higher than 200 Wcm?2, in which the deposition rate is improved and in the need for partial reactive gas pressure feedback systems is eliminated.

Abstract: A high production rate plasma sputtering process for producing particles having a size of 10 ?m or less is disclosed. The process causes ionization of at least a part of the sputtered target atoms and is performed at such parameters that the pick-up probability of ionized sputtered target atoms on the surface of grains is high.

Abstract: The present invention relates to a method of producing coatings of metal oxide, nitride or carbide or mixtures thereof, whereby operating a High Power Impulse Magnetron Sputtering, HIPIMS, discharged on one or more target (s) (3), in an argon and reactive gas mixture (5, 6), at peak pulse power higher than 200 Wcm?2, in which the deposition rate is improved and in the need for partial reactive gas pressure feedback systems is eliminated.