Abstract: The invention herein disclosed relates to a thyristor of the MOS control type. The thyristor has a series of semiconductor layers of varying conductibility types lying above one another in which the semiconductor layers lying at the ends of the series are provided with end-side electrodes and in which a part of the surface of the next-to-the-last layer not covered by the last layer is charged with a control voltage supplied via a control terminal. A power-saving control is obtained in thyristors of this type. This objective is attained in that a region of the surface of the next-to-the-last layer not covered by the last layer is covered with a thin, insulating layer on which a gate connected with a control terminal is arranged. Next to the edge of the last layer, a zone exhibiting the same conductibility type as this last layer is formed which completely penetrates the next-to-the-last layer.

Abstract: A stage useful as either a differential amplifier or a regenerator for a charge coupled device is disclosed herein. The stage is arranged on a substrate for the charge coupled device and adjacent the pulsable electrodes of first and second planes of an electrical insulating layer over the substrate. The stage has a diffusion zone which is oppositely doped to the substrate. Adjacent the diffusion zone the first electrode is arranged in the first plane of the insulating layer. Adjacent the first electrode a large-area second electrode is arranged. Adjacent the second electrode a first plane third electrode, a second plane fourth electrode, and a first plane fifth electrode are arranged, a fifth electrode being positioned adjacent one of the pulsable electrodes of the charge coupled device.

Abstract: A device for selectively shifting charges in a given direction, or in the opposite direction, and for storing charges selectively employs a charge coupled charge shift arrangement having a substrate of doped semiconductor material, an electrical insulating layer on the substrate and at least one row of first electrodes on the insulating layer which are separated from one another by gaps and at least one row of second electrodes arranged at least over each gap and insulated from the first electrodes. In addition to contacts for introducing and withdrawing charges, first contact lines connect each first electrode to alternate ones of the first electrodes in the row and second contact lines connect each second electrode to alternate ones of the second electrodes in the row. Each of the contact lines which serves to connect the first electrodes is capacitively connected to the contact lines which serve to connect the second electrodes directly adjacent on the one side of the first electrodes.

Abstract: A charge coupled transfer arrangement in which majority carriers are used for the charge transfer, in particular according to the peristaltic principle or according to the buried channel principle for the storage movement of electrical charges in a predetermined direction comprises a thin doped semiconductor layer on a high resistive material and a layer of insulating material arranged on the semiconductor layer. The insulating layer has a plurality of individual electrode arrangements disposed thereon for the movement of charges, the electrode arrangements being arranged in a row parallel to the predetermined direction of movement. Electrodes are also provided for charge input and charge output. Each electrode arrangement comprises at least two electrodes separated by a gap and extending parallel to the predetermined direction.