Abstract: The invention relates to a semiconductor arrangement used in particular for the manufacture of infrared-emitting diodes. A first Si-doped GaAlAs layer containing an n-conductivity zone and a p-conductivity zone is deposited onto an n-doped GaAs semiconductor substrate. The Al content decreases continuously over the thickness of the layer. A second GaAlAs layer is deposited on the p-conductivity first zone of the first GaAlAs layer. The Al concentration of the second layer at the barrier surface with the first layer is greater than the Al concentration of the first GaAlAs layer at the barrier surface with the substrate and decreases continuously with the thickness of the second layer. The curve of the Al concentrations in the two epitaxial layers permits a light guiding effect so that the emitted radiation can, unlike conventional GaAlAs diodes, be output preferably onto those sides of the semiconductor array oriented vertically or perpendicularly to the substrate.