Abstract: Hie present invention relates to an organic light emitting diode comprising an anode, a cathode, a first emission layer, a second emission layer, a first charge generation layer and a first electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C10-C30 condensed aryl group and/or at least one unsubstituted or substituted C3-C30 heteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a C1 to C22 silyl group, (iv) a C1 to C30 alkyl group, (v) a C1 to C10 alkylsilyl group, (vi) a C6 to C22 arylsilyl group, (vii) a C3 to C30 cycloalkyl group, (viii) a C2 to C30 heterocycloalkyl group, (ix) a C6 to C30 aryl group, (x) a C2 to C30 heteroaryl group, (xi) a C1 to C30 perfluoro-hydrocarbyl group, or (xii) a C1 to C10 trifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ?0 and ?2 Debye; and ii) a mole

Abstract: The present invention is directed to a semiconducting material comprising: i) a compound according to formula (I) wherein R1, R2 and R3 are independently selected from C1-C30-alkyl, C3-C30 cycloalkyl, C2-C30-heteroalkyl, C6-C30-aryl, C2-C30-heteroaryl, C1-C30-alkoxy, C3-C30-cycloalkyloxy, C6-C30 aryloxy, and from structural unit having general formula E-A-, wherein—A is a C6-C30 phenylene spacer unit, and—E is an electron transporting unit that is selected from C10-C60 aryl and C6-C60 heteroaryl comprising up to 6 heteroatoms independently selected from O, S, P, Si and B and that comprises a conjugated system of at least 10 delocalized electrons, and—at least one group selected from R1, R2 and R3 has the general formula E-A-; and ii) at least one complex of a monovalent metal having formula (II) wherein—M+ is a positive metal ion bearing a single elementary charge, and each of A1, A2, A3 and A4 is independently selected from H, substituted or unsubstituted C6-C20 aryl and substituted or unsubstituted C2-C20 h

Abstract: Organic electroluminescent device comprising an anode, a cathode, at least one emission layer and an organic semiconducting layer; wherein the organic semiconducting layer is arranged between the at least one emission layer and the cathode; wherein the organic semiconducting layer comprises; a) a first organic compound comprising a first C10 to C42 arene structural moiety and/or a first C2 to C42 heteroarene structural moiety, wherein i) the dipole moment of the first organic compound, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is from 0 to 2.5 Debye; and ii) the LUMO energy level of the first organic compound in the absolute scale taking vacuum energy level as zero, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is in the range from ?1.7 eV to ?2.

Abstract: The present invention relates to a organic light emitting device comprising a cathode, an anode, a light emitting layer, at least one first electron transport layer and at least one second electron transport layer, wherein the light emitting layer, the first electron transport layer and the second electron transport layer are arranged between the cathode and the anode, wherein the first electron transport layer comprises a compound of formula (I) and the second electron transport layer comprises a compound of formula (II) as well as to a compound for use in an organic electronic device.

Abstract: The present invention is directed to matrix compounds and an organic light-emitting diode (OLED) comprising an emission layer and an electron transport layer stack of at least two electron transport layers, wherein a first electron transport layer and a second electron transport layer comprises at least one matrix compound, wherein the matrix compound or compounds of the first electron transport layer is/are different to the matrix compound or compounds of the second electron transport layer; and in addition, the first electron transport layer comprises a dopant of a lithium halide and/or lithium organic complex; and the second electron transport layer is free of a dopant; wherein at least one matrix compound of the second electron transport layer having the chemical formula Ia, Ib and/or Ic: (Ia) (Ib) (Ic) wherein Ar=substituted or unsubstituted arylene with 6 to 20 ring-forming carbon atoms; or carbazolylene; ET=substituted or unsubstituted aryl group with 13 to 40 ring-forming carbon atoms; or a substitute

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Abstract: The invention relates to electrically doped semiconducting material comprising iii) at least one electrical dopant selected from metal salts consisting of at least one metal cation and at least one anion and iv) at least one matrix compound of formula 1 wherein each of R1, R2, R1, R2? is independently selected from H, C1-C6 alkyl, C1-C6 haloalkyl and C6-C14 aryl or both substituents on the same aromatic ring of the xanthene skeleton are hydrocarbyl groups linked with each other to form together an anelated divalent C2-C10 hydrocarbyl group and A and A? are independently selected from C1-C20 heteroaryl group comprising at least one sp2 hybridized nitrogen atom as well as an electronic device and a compound.

Abstract: The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

Abstract: An organic light-emitting device comprising: a first electrode; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer comprises an emission layer and an electron transport layer disposed between the emission layer and the second electrode, the electron transport layer comprises a first electron transport layer disposed between the emission layer and the second electrode and a second electron transport layer disposed between the first electron transport layer and the second electrode, the first electron transport layer comprises a first metal-free compound, the second electron transport layer comprises a second metal-free compound, the first metal-free compound and the second metal-free compound are different from each other, and the second metal-free compound is represented by Formula 2 as provided herein.

Abstract: The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

Abstract: The present invention relates to an electronic device comprising at least one light emitting layer between an anode and a cathode, the device further comprising between the cathode and the anode at least one mixed layer comprising (i) in substantially elemental form, an electropositive element selected from Li, Na, K, Be, Sc, Y, La, Lu, Ti and V, and (ii) at least one substantially covalent electron transport matrix compound comprising at least one polar group selected from a phosphine oxide group, wherein the reduction potential of the substantially covalent electron transport matrix compound, if measured by cyclic voltammetry under the same conditions, has the value which is more negative than the value obtained for 4,7-diphenyl-1, 10-phenanthroline, preferably more negative than for (9-phenyI-9II-carbazole-2,7-diyl)bis(diphenylphosphine oxide), more preferably more negative than for (9,9-dihexyI-9H-fluorene-2,7-diyl)bis(diphenylphosphine oxide), highly preferably more negative than for 1,3,5-tris(1-phenyl-

Abstract: The present invention is directed to matrix compounds and an organic light-emitting diode (OLED) comprising an emission layer and an electron transport layer stack of at least two electron transport layers, wherein a first electron transport layer and a second electron transport layer comprises at least one matrix compound, wherein the matrix compound or compounds of the first electron transport layer is/are different to the matrix compound or compounds of the second electron transport layer; and in addition, the first electron transport layer comprises a dopant of a lithium halide and/or lithium organic complex; and the second electron transport layer is free of a dopant; wherein at least one matrix compound of the second electron transport layer having the chemical formula Ia, Ib and/or Ic: (Ia) (Ib) (Ic) wherein Ar=substituted or unsubstituted arylene with 6 to 20 ring-forming carbon atoms; or carbazolylene; ET=substituted or unsubstituted aryl group with 13 to 40 ring-forming carbon atoms; or a substitute

Abstract: An organic light emitting device comprises a light emitting layer comprising a light emitting polymer; and an electron transporting layer on the light emitting layer and comprising an electron transporting material and an n-donor material. The electron transporting layer comprises at least 20 percent by weight of the n-donor material. By using an electron transporting layer comprising at least 20 percent by weight of the n-donor material it is possible to realise devices with an electron transporting layer having a thickness of less than 20 nm.

Abstract: The invention relates to electrically doped semiconducting material comprising iii) at least one electrical dopant selected from metal salts consisting of at least one metal cation and at least one anion and iv) at least one matrix compound of formula 1 wherein each of R1, R2, R1, R2? is independently selected from H, C1-C6 alkyl, C1-C6 haloalkyl and C6-C14 aryl or both substituents on the same aromatic ring of the xanthene skeleton are hydrocarbyl groups linked with each other to form together an anelated divalent C2-C10 hydrocarbyl group and A and A? are independently selected from C1-C20 heteroaryl group comprising at least one sp2 hybridized nitrogen atom as well as an electronic device and a compound.

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Abstract: The disclosure relates to xanthene derivatives, and electronic devices including xanthene derivatives. The electronic devices may includes an electron transporting layer or an electron injecting layer, and the electron transporting layer or the electron injecting layer may include one of the xanthene derivative.

Abstract: Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Abstract: Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials.