Patents by Inventor Ulrich Engelmann

Ulrich Engelmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11270893
    Abstract: A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-based film formed over a substrate with a mask patterned over the poly-granular metal-based film. The method also includes applying a source power to generate a background plasma from the background gas, and providing a flow of a modifying gas while maintaining the flow of the background gas to generate a modifying plasma that produces a surface modification region with a substantially uniform depth in the top surface of the poly-granular metal-based film exposed by the mask. The method further includes stopping the flow of the modifying gas while maintaining the flow of the background gas, and applying a biasing power to the substrate to remove the surface modification region.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: March 8, 2022
    Assignee: International Business Machines Corporation
    Inventors: John M. Papalia, Hiroyuki Miyazoe, Nathan P. Marchack, Sebastian Ulrich Engelmann
  • Publication number: 20210118693
    Abstract: A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.
    Type: Application
    Filed: October 21, 2019
    Publication date: April 22, 2021
    Inventors: Nicholas Joy, Devi Koty, Qingyun Yang, Nathan P. Marchack, Sebastian Ulrich Engelmann
  • Publication number: 20200321220
    Abstract: A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-based film formed over a substrate with a mask patterned over the poly-granular metal-based film. The method also includes applying a source power to generate a background plasma from the background gas, and providing a flow of a modifying gas while maintaining the flow of the background gas to generate a modifying plasma that produces a surface modification region with a substantially uniform depth in the top surface of the poly-granular metal-based film exposed by the mask. The method further includes stopping the flow of the modifying gas while maintaining the flow of the background gas, and applying a biasing power to the substrate to remove the surface modification region.
    Type: Application
    Filed: April 8, 2019
    Publication date: October 8, 2020
    Inventors: John M. Papalia, Hiroyuki Miyazoe, Nathan P. Marchack, Sebastian Ulrich Engelmann
  • Patent number: 9080923
    Abstract: Method for checking the leakproffness of safety valves. Method for testing the leadkproofness of two controllable valves (V1, V2), wherein the vales are arranged at opposite ends of a test volume (10). An inlet pressure pe is present upstream of the test volume, in front of valve V1, and an outlet pressure pa is present downstream of the test volume, behind the valve V2. A control device controls the valves to open and close, and the control device is coupled to at least two pressure switches (26, 27) which are both operatively connected to the test volume (10) in order to monitor the pressure. The first pressure switch is set to a first triggering threshold d1, wherein d1=pe/x, where x>3. The second pressure switch is set to a second triggering threshold d2, wherein d2=pe(1?1/x). A valve is controlled in order to open the valve for a period of time tL1 and then to close said valve. The process then waits for a measurement period tM1 and a first pressure switch is checked.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: July 14, 2015
    Assignee: Elster GmbH
    Inventors: Aloys Quatmann, Ulrich Engelmann, Oliver Borgmann
  • Publication number: 20140174158
    Abstract: Method for checking the leakproffness of safety valves. Method for testing the leadkproofness of two controllable valves (V1, V2), wherein the vales are arranged at opposite ends of a test volume (10). An inlet pressure pe is present upstream of the test volume, in front of valve V1, and an outlet pressure pa is present downstream of the test volume, behind the valve V2. A control device controls the valves to open and close, and the control device is coupled to at least two pressure switches (26, 27) which are both operatively connected to the test volume (10) in order to monitor the pressure. The first pressure switch is set to a first triggering threshold d1, wherein d1=pe/x, where x>3. The second pressure switch is set to a second triggering threshold d2, wherein d2=pe(1?1/x). A valve is controlled in order to open the valve for a period of time tL1 and then to close said valve. The process then waits for a measurement period tM1 and a first pressure switch is checked.
    Type: Application
    Filed: June 26, 2012
    Publication date: June 26, 2014
    Applicant: Elster GmbH
    Inventors: Aloys Quatmann, Ulrich Engelmann, Oliver Borgmann
  • Patent number: 8658050
    Abstract: Techniques for minimizing or eliminating pattern deformation during lithographic pattern transfer to inorganic substrates are provided. In one aspect, a method for pattern transfer into an inorganic substrate is provided. The method includes the following steps. The inorganic substrate is provided. An organic planarizing layer is spin-coated on the inorganic substrate. The organic planarizing layer is baked. A hardmask is deposited onto the organic planarizing layer. A photoresist layer is spin-coated onto the hardmask. The photoresist layer is patterned. The hardmask is etched through the patterned photoresist layer using reactive ion etching (RIE). The organic planarizing layer is etched through the etched hardmask using RIE. A high-temperature anneal is performed in the absence of oxygen. The inorganic substrate is etched through the etched organic planarizing layer using reactive ion etching.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: February 25, 2014
    Assignee: International Business Machines Corporation
    Inventors: Sebastian Ulrich Engelmann, Martin Glodde, Michael A. Guillorn
  • Publication number: 20130026133
    Abstract: Techniques for minimizing or eliminating pattern deformation during lithographic pattern transfer to inorganic substrates are provided. In one aspect, a method for pattern transfer into an inorganic substrate is provided. The method includes the following steps. The inorganic substrate is provided. An organic planarizing layer is spin-coated on the inorganic substrate. The organic planarizing layer is baked. A hardmask is deposited onto the organic planarizing layer. A photoresist layer is spin-coated onto the hardmask. The photoresist layer is patterned. The hardmask is etched through the patterned photoresist layer using reactive ion etching (RIE). The organic planarizing layer is etched through the etched hardmask using RIE. A high-temperature anneal is performed in the absence of oxygen. The inorganic substrate is etched through the etched organic planarizing layer using reactive ion etching.
    Type: Application
    Filed: July 27, 2011
    Publication date: January 31, 2013
    Applicant: International Business Machines Corporation
    Inventors: Sebastian Ulrich Engelmann, Martin Glodde, Michael A. Guillorn
  • Publication number: 20120193715
    Abstract: A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench.
    Type: Application
    Filed: April 9, 2012
    Publication date: August 2, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sebastian Ulrich Engelmann, Nicholas C.M. Fuller, Eric Andrew Joseph, Isaac Lauer, Ryan M. Martin, James Vichiconti, Ying Zhang
  • Publication number: 20120193680
    Abstract: A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench.
    Type: Application
    Filed: April 9, 2012
    Publication date: August 2, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sebastian Ulrich Engelmann, Nicholas C.M. Fuller, Eric Andrew Joseph, Isaac Lauer, Ryan M. Martin, James Vichiconti, Ying Zhang
  • Patent number: 8232171
    Abstract: A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench.
    Type: Grant
    Filed: September 17, 2009
    Date of Patent: July 31, 2012
    Assignee: International Business Machines Corporation
    Inventors: Sebastian Ulrich Engelmann, Nicholas C. M. Fuller, Eric Andrew Joseph, Isaac Lauer, Ryan M. Martin, James Vichiconti, Ying Zhang
  • Publication number: 20110062494
    Abstract: A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench.
    Type: Application
    Filed: September 17, 2009
    Publication date: March 17, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sebastian Ulrich Engelmann, Nicholas C.M. Fuller, Eric Andrew Joseph, Isaac Lauer, Ryan M. Martin, James Vichiconti, Ying Zhang