Abstract: The disclosure relates to an implant comprising a housing, in which there are arranged an energy store and an electronics module, wherein a feedthrough to an electrode connection device is formed on the housing, wherein a first contact forms an electrical connection between the energy store and the electronics module, wherein a second contact forms an electrical connection between the electronics module and the feedthrough, and wherein the first contact and the second contact are oriented in the same contact direction. A method for assembling an implant is also disclosed.

Abstract: The disclosure relates to an implant comprising an electronics module and an energy store, wherein the volume of the electronics module is less than 25% of the volume of the energy store.

Abstract: The disclosure relates to an implant comprising an electrode connection device and a housing, wherein a cover for closing the housing is formed on the electrode connection device. A method for producing an implant is also disclosed.

Abstract: The disclosure relates to an implant comprising an electronics module and an energy store, wherein the volume of the electronics module is less than 25% of the volume of the energy store.

Abstract: The disclosure relates to an implant comprising a housing, in which there are arranged an energy store and an electronics module, wherein a feedthrough to an electrode connection device is formed on the housing, wherein a first contact forms an electrical connection between the energy store and the electronics module, wherein a second contact forms an electrical connection between the electronics module and the feedthrough, and wherein the first contact and the second contact are oriented in the same contact direction. A method for assembling an implant is also disclosed.

Abstract: The disclosure relates to an implant comprising an electrode connection device and a housing, wherein a cover for closing the housing is formed on the electrode connection device. A method for producing an implant is also disclosed.

Abstract: The disclosure relates to an implant comprising an electronics module and an electronic component, wherein an electrical connection between the electronics module and the electronic component is formed by a straight plug-in connection. A method for producing an electrical connection between an electronics module and an electronic component of an implant is also disclosed.

Abstract: A configuration performs electrical therapy on a patient and is configured to produce at least one electrical therapeutic voltage, which acts at a therapy site in or on the patient's body. The configuration contains at least one first and one second subunit, and every subunit has at least one energy storage. The amount of energy storable by every individual energy storage is smaller than the amount of energy required to produce the electrical voltage for therapy.

Abstract: A voltage-resistant switch comprising a first switching contact and a second switching contact, and an MOS switching transistor having a source terminal, a drain terminal and a gate terminal, wherein the source terminal of the MOS switching transistor is connected to the second switching contact, and the drain terminal of the MOS switching transistor is connected to the first switching contact. The voltage-resistant switch has a switching monitoring unit with a control input and a protection output and a protection switch with a switching input, wherein the switching input is connected to the protection output of the switching monitoring unit and the protection switch is arranged and adapted to electrically connect the gate terminal of the first MOS switching transistor to the source terminal of the first MOS switching transistor in dependence on a protection signal.

Abstract: Certain embodiments of the present invention disclose a voltage-resistant switch comprising a first switching contact and a second switching contact, and an MOS switching transistor having a source terminal, a drain terminal and a gate terminal, wherein the source terminal of the MOS switching transistor is connected to the second switching contact, and the drain terminal of the MOS switching transistor is connected to the first switching contact. The voltage-resistant switch is characterised in that the voltage-resistant switch has a switching monitoring unit with a control input and a protection output and a protection switch with a switching input, wherein the switching input is connected to the protection output of the switching monitoring unit and the protection switch is arranged and adapted to electrically connect the gate terminal of the first MOS switching transistor to the source terminal of the first MOS switching transistor in dependence on a protection signal.

Abstract: An electronic memory device, in particular for use in implantable medical appliances, is provided with one or more electronic read/write memory chips, a carrier for the mechanical fixing of the RAM chip or chips, address inputs, a read/write input and a data bus connection, the RAM chip or chips in the memory device each being provided with two interfaces which are arranged on the input side and output side relative to the respective RAM chip and each comprise address bus, data bus and read/write connection, the address bus, data bus and read/write connection of the input-side interface being connected internally directly to the respectively allocated address bus, data bus and read/write connection of the output-side interface for signal transmission by the RAM chip.