Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

Abstract: The invention concerns a heat coupling device for scanning force or atomic force microscopy, comprising a first heat conducting device (27), a second heat conducting device (28) and a coupling device (36, 38, 39, 40, 41), in which the first heat conducting device (27) is movable relative to the second heat conducting device (28) and the coupling device (36, 38, 39, 40, 41) is arranged between the first and second heat conducting device (27, 28) and designed so that it is at least partially deformable fluid-like and/or flexible and the heat can be transferred between the first and second heat conducting device (28).

Abstract: This invention relates to an integrated zener diode having a breakdown voltage of less than about 5 volts. In order to achieve predetermined breakdown voltages within a small gap in the mass production independent of the bulk resistivity fluctuations, the zener diode of the invention comprises a forward-biased control transistor, the base zone of which is fed via a resistor zone to the emitter of said transistor as well as via the collector-emitter-line of a further multi-emitter transistor structure to the collector of said control transistor.