Abstract: The invention relates to a method for producing highly ordered pore structures in porous aluminium oxide using a nano-imprint stamp and also to a method for the manufacturing of the stamp and to the stamp itself.

Abstract: The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 ?m. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse.

Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.

Abstract: The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 &mgr;m. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse.

Abstract: A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps: Selection of a substrate of a mono-crystalline material having a fixed lattice constant (aSi) or with a layer consisting of such a material. Manufacture of a strained silicon layer with foreign material atoms incorporated at substitutional lattice sites on the mono-crystalline material of the substrate. Transfer of the strained layer into an at least partly relaxed state in which it adopts by relaxation and through the selected foreign material concentration a lattice constant (aSi(C) which satisfies the condition n.aSi(C)=m.aD, wherein n and m are integers and aD is the lattice constant of diamond, with the relaxed layer forming the substrate or substrate surface for the epitaxial growth.

Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.

Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.

Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.

Abstract: A process for joining two solid bodies, in particular of silicon. via the substantially smooth surfaces that have first of all been coated with a monomolecular layer of a sulfur-containing organosilane, and the resultant solid bodies, which may be used in microelectronics or micromechanics.

Abstract: A method for the releasable bonding of at least two wafers (10, 12), for example of two silicon wafers (silicon discs), or of a silicon wafer and a glass wafer, or of a semiconductor wafer and a cover wafer, by a wafer bonding method in which the surfaces to be brought into contact with one another are at least substantially optically smooth and flat. Prior to bringing the surfaces of the wafers (10, 12) into contact, one or more drops of a liquid are applied to at least one of the surfaces, and the wafer bonding method is carried out at least substantially at room temperature, or at a somewhat higher temperature, or optionally at a somewhat lower temperature. The wafers (10, 12) which are bonded together can easily be separated from one another in that at least the liquid enclosed between the wafers (10, 12), which are bonded to one another, is exposed to a temperature lying substantially above the bonding temperature at which the liquid vaporizes. A wafer structure is also disclosed.

Abstract: A method of manufacturing microstructures in which a hollow cavity is formed in a first wafer, in particular, a silicon wafer, and the hollow cavity is, covered over by a second wafer, which is in particular, also a silicon wafer, by a wafer bonding process in vacuum for the formation of an enclosed hollow cavity, wherein the wafer bonding is carried out in an ultra-high vacuum in order to achieve the smallest possible internal pressure in the hollow cavity of less than 0.1 mbar. The surfaces of the wafers which are to be brought into contact with one another are treated by a surface cleaning process in order to produce at least substantially pure surfaces, i.e. surfaces which consist substantially only of the material of the respective wafer and which are at least substantially free of H.sub.2 O, H.sub.2 and O.sub.2. A microstructure is also claimed.