Patents by Inventor Ulrich Jacob

Ulrich Jacob has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-emitting optical component
    Patent number: 8723207
    Abstract: A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: May 13, 2014
    Assignee: Osram GmbH
    Inventors: Ulrich Jacob, Gertrud Kräuter, Andreas Plössl
  • Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
    Patent number: 8436393
    Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Grant
    Filed: April 4, 2011
    Date of Patent: May 7, 2013
    Assignee: Osram GmbH
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
  • Radiation-Emitting Optical Component
    Publication number: 20120091491
    Abstract: A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.
    Type: Application
    Filed: October 18, 2011
    Publication date: April 19, 2012
    Inventors: Ulrich Jacob, Gertrud Kräuter, Andreas Plössl
  • Radiation-emitting optical component
    Patent number: 8039855
    Abstract: A radiation-emitting semiconductor component, having a layer structure (30) which includes an active layer (32) which, in operation, emits radiation with a spectral distribution (60), and electrical contacts (36, 38, 40) for applying a current to the layer structure (30), includes a coating layer (44) which at least partially surrounds the active layer (32) and holds back a short-wave component of the emitted radiation (60).
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: October 18, 2011
    Assignee: OSRAM GmbH
    Inventors: Ulrich Jacob, Gertrud Kräuter, Andreas Plössl
  • LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME
    Publication number: 20110175058
    Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Application
    Filed: April 4, 2011
    Publication date: July 21, 2011
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
  • Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
    Patent number: 7939844
    Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: May 10, 2011
    Assignee: OSRAM GmbH
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
  • LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GAN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME
    Publication number: 20070221936
    Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a -doped layer (5). The p-doped layer (5) is provided, on its main surface (9)facing away from the active region (19), with a reflective contact metallization (6)comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Application
    Filed: May 30, 2007
    Publication date: September 27, 2007
    Applicant: Osram GmbH
    Inventors: BERTHOLD HAHN, Ulrich Jacob, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow
  • Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
    Patent number: 7265392
    Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Grant
    Filed: May 28, 2001
    Date of Patent: September 4, 2007
    Assignee: Osram GmbH
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
  • Light-emitting diode and method for the production thereof
    Patent number: 7015514
    Abstract: A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: March 21, 2006
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
  • Radiation-emitting chip
    Patent number: 6897488
    Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
    Type: Grant
    Filed: November 6, 2001
    Date of Patent: May 24, 2005
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Ulrich Jacob, Raimund Oberschmid, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
  • Radiation-emitting semiconductor chip and light-emitting diode
    Patent number: 6891199
    Abstract: Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
    Type: Grant
    Filed: July 24, 2001
    Date of Patent: May 10, 2005
    Assignee: Osram GmbH
    Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
  • Radiation-emitting optical component
    Publication number: 20040238837
    Abstract: A radiation-emitting semiconductor component, having a layer structure (30) which includes an active layer (32) which, in operation, emits radiation with a spectral distribution (60), and electrical contacts (36, 38, 40) for applying a current to the layer structure (30), includes a coating layer (44) which at least partially surrounds the active layer (32) and holds back a short-wave component of the emitted radiation (60).
    Type: Application
    Filed: July 6, 2004
    Publication date: December 2, 2004
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ulrich Jacob, Gertrud Krauter, Andreas Plossl
  • Radiation-emitting semiconductor chip and light-emitting diode
    Publication number: 20040056263
    Abstract: Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
    Type: Application
    Filed: September 11, 2003
    Publication date: March 25, 2004
    Inventors: Johannes Baur, Eisert Dominik, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Volki, Ulrich Zehnder
  • Light-emitting diode and method for the production thereof
    Publication number: 20040051106
    Abstract: A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).
    Type: Application
    Filed: June 25, 2003
    Publication date: March 18, 2004
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
  • Radiation-emitting chip
    Publication number: 20040048429
    Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
    Type: Application
    Filed: October 2, 2003
    Publication date: March 11, 2004
    Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Raimund Oberschmid, Werner Plass, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
  • Light-emitting-diode chip comprising a sequence of gan-based epitaxial layer which emit radiation, and a method for producing the same
    Publication number: 20030168664
    Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Application
    Filed: January 16, 2003
    Publication date: September 11, 2003
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow