Abstract: An ideal quartz glass for a wafer jig for use in an environment having an etching effect is distinguished by both high purity and high resistance to dry etching. To indicate a quartz glass that substantially fulfills these requirements, it is suggested according to the invention that the quartz glass is doped with nitrogen at least in a near-surface area, has a mean content of metastable hydroxyl groups of less than 30 wt ppm and that its fictive temperature is below 1250° C. and its viscosity is at least 1013 dPa·s at a temperature of 1200° C. An economic method for producing such a quartz glass comprises the following method steps: melting an SiO2 raw material to obtain a quartz glass blank, the SiO2 raw material or the quartz glass blank being subjected to a dehydration measure, heating the SiO2 raw material or the quartz glass blank to a nitriding temperature in the range between 1050° C. and 1850° C.

Abstract: The invention relates to a method for the economic production of a blank for a component made from laser-active quartz glass in any form or dimension. The method comprises the following method steps: a) preparation of a dispersion with a solids content of at least 40 wt. %, comprising SiO2 nanopowder and doping agents, including a cation of the rare earth metals and transition metals in a fluid, b) granulation by agitation of the dispersion, with removal of moisture to form a doped SiO2 granulate of spherical porous granular particles with a moisture content of less than 35 wt. % and a density of at least 0.95 g/cm3, c) drying and purification of the SiO2 granulate, by heating to a temperature of at least 1000° C. to form doped porous SiO2 grains with an OH content of less than 10 ppm and d) sintering or fusing the doped SiO2 grains in a reducing atmosphere to give the blank made from doped quartz glass.

Abstract: Quartz glass components for use in semiconductor manufacture are produced by mechanically machining the surface of a quartz glass blank so as to produce an initial average surface roughness Ra,0. The thus machined component surface is then cleaned in an etching solution. The invention relates to the optimisation of particle formation on such components, during the first intended use already. It is proposed to produce an initial average surface roughness Ra,0 of at least 0.2 ?m by mechanical machining, and to adjust etching intensity and duration so that an actual etching depth of at least 10 ?m is achieved. A quartz glass component produced by this process for use in semiconductor manufacture is characterised in that it comprises, before its first intended use, a surface produced by mechanical machining and etching having an etched structure with an average surface roughness Ra,1 ranging from 0.6 ?m to 8 ?m, and in that a weight loss of less than 0.

Abstract: The invention relates to methods for producing a coated component consisting of quartz glass, according to which the component surface is at least partially provided with a SiO2 glass composition that differs from the quartz glass of the base body. The aim of the invention is to provide a novel way of coating a quartz glass component with a SiO2 glass composition that can be produced in a cost-effective, reproducible manner, with any thickness, and can fulfil various functions according to the concrete embodiment thereof. To this end, an amorphous slip containing SiO2 particles is produced and applied to the surface of the base body, forming a slip layer which is dried and then vitrified, forming a SiO2 glass composition. The quartz glass components coated in this way can be advantageously used especially in the production of semiconductors.

Abstract: An ideal quartz glass for a wafer jig for use in an environment having an etching effect is distinguished by both high purity and high resistance to dry etching. To indicate a quartz glass that substantially fulfills these requirements, it is suggested according to the invention that the quartz glass is doped with nitrogen at least in a near-surface area, has a mean content of metastable hydroxyl groups of less than 30 wt ppm and that its fictive temperature is below 1250° C. and its viscosity is at least 1013 dPa·s at a temperature of 1200° C. An economic method for producing such a quartz glass comprises the following method steps: melting an SiO2 raw material to obtain a quartz glass blank, the SiO2 raw material or the quartz glass blank being subjected to a dehydration measure, heating the SiO2 raw material or the quartz glass blank to a nitriding temperature in the range between 1050° C. and 1850° C.

Abstract: The invention relates to a method for the economic production of a blank for a component made from laser-active quartz glass in any form or dimension. The method comprises the following method steps: a) preparation of a dispersion with a solids content of at least 40 wt. %, comprising SiO2 nanopowder and doping agents, including a cation of the rare earth metals and transition metals in a fluid, b) granulation by agitation of the dispersion, with removal of moisture to form a doped SiO2 granulate of spherical porous granular particles with a moisture content of less than 35 wt. % and a density of at least 0.95 g/cm3, c) drying and purification of the SiO2 granulate, by heating to a temperature of at least 1000° C. to form doped porous SiO2 grains with an OH content of less than 10 ppm and d) sintering or fusing the doped SiO2 grains in a reducing atmosphere to give the blank made from doped quartz glass.