Abstract: An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.

Abstract: An illumination optical unit serves for illuminating objects to be examined by a metrology system. The illumination optical unit has an optical pupil shaping assembly for generating a defined distribution of illumination angles of illumination light over an object field in which an object to be examined can be arranged. An optical field shaping assembly for generating a defined intensity distribution of the illumination light over the object field is disposed downstream of the pupil shaping assembly in the beam path of the illumination light. The field shaping assembly has at least one optical field shaping element arranged in the region of a pupil plane of the illumination optical unit. This results in an illumination optical unit which ensures an illumination which can be set in a defined manner with regard to an intensity distribution and an illumination angle distribution over the entire object field.

Abstract: The present application relates to an apparatus for a scanning probe microscope, said apparatus having: (a) at least one first measuring probe having at least one first cantilever, the free end of which has a first measuring tip; (b) at least one first reflective area arranged in the region of the free end of the at least one first cantilever and embodied to reflect at least two light beams in different directions; and (c) at least two first interferometers embodied to use the at least two light beams reflected by the at least one first reflective area to determine the position of the first measuring tip.

Abstract: In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected.

Abstract: An illumination optical unit serves for illuminating objects to be examined by a metrology system. The illumination optical unit has an optical pupil shaping assembly for generating a defined distribution of illumination angles of illumination light over an object field in which an object to be examined can be arranged. An optical field shaping assembly for generating a defined intensity distribution of the illumination light over the object field is disposed downstream of the pupil shaping assembly in the beam path of the illumination light. The field shaping assembly has at least one optical field shaping element arranged in the region of a pupil plane of the illumination optical unit. This results in an illumination optical unit which ensures an illumination which can be set in a defined manner with regard to an intensity distribution and an illumination angle distribution over the entire object field.

Abstract: The invention relates to a method and a device for characterizing a mask for microlithography. In a method according to the invention, structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus are illuminated by an illumination optical unit, wherein the mask is imaged onto a detector unit by an imaging optical unit, wherein image data recorded by the detector unit are evaluated in an evaluation unit. In this case, for emulating an illumination setting predefined for the lithography process in the microlithographic projection exposure apparatus, the imaging of the mask onto the detector unit is carried out in a plurality of individual imagings which differ from one another with regard to the illumination setting set in the illumination optical unit or the polarization-influencing effect set in the imaging optical unit.

Abstract: An illumination optical unit serves for illuminating objects to be examined by a metrology system. The illumination optical unit has an optical pupil shaping assembly for generating a defined distribution of illumination angles of illumination light over an object field in which an object to be examined can be arranged. An optical field shaping assembly for generating a defined intensity distribution of the illumination light over the object field is disposed downstream of the pupil shaping assembly in the beam path of the illumination light. The field shaping assembly has at least one optical field shaping element arranged in the region of a pupil plane of the illumination optical unit. This results in an illumination optical unit which ensures an illumination which can be set in a defined manner with regard to an intensity distribution and an illumination angle distribution over the entire object field.

Abstract: In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Abstract: In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Abstract: An illumination optical unit serves for illuminating objects to be examined by a metrology system. The illumination optical unit has an optical pupil shaping assembly for generating a defined distribution of illumination angles of illumination light over an object field in which an object to be examined can be arranged. An optical field shaping assembly for generating a defined intensity distribution of the illumination light over the object field is disposed downstream of the pupil shaping assembly in the beam path of the illumination light. The field shaping assembly has at least one optical field shaping element arranged in the region of a pupil plane of the illumination optical unit. This results in an illumination optical unit which ensures an illumination which can be set in a defined manner with regard to an intensity distribution and an illumination angle distribution over the entire object field.

Abstract: An illumination optical unit serves for illuminating objects to be examined by a metrology system. The illumination optical unit has an optical pupil shaping assembly for generating a defined distribution of illumination angles of illumination light over an object field in which an object to be examined can be arranged. An optical field shaping assembly for generating a defined intensity distribution of the illumination light over the object field is disposed downstream of the pupil shaping assembly in the beam path of the illumination light. The field shaping assembly has at least one optical field shaping element arranged in the region of a pupil plane of the illumination optical unit. This results in an illumination optical unit which ensures an illumination which can be set in a defined manner with regard to an intensity distribution and an illumination angle distribution over the entire object field.

Abstract: An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.

Abstract: In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Abstract: A method is provided for emulating the imaging of a scanner mask pattern to expose wafers via a mask inspection microscope, in which the mask was corrected by introducing scattering centers. The method includes determining a correlation between the first values of at least one characteristic of aerial images of the mask pattern as produced by a mask inspection microscope and the second values of the at least one characteristic of aerial images of the mask pattern as produced by a scanner, recording a first aerial image of the mask pattern with the mask inspection microscope, determining the first values of the at least one characteristic from the first aerial image, and determining the second values of the at least one characteristic of the first aerial image, using the correlation. A mask inspection microscope is also provided for emulating the imaging of a mask pattern of a scanner to expose wafers, in which the mask was corrected by introducing scattering centers.

Abstract: An aerial image is generated by imaging an object with the use of an imaging optic, the object being illuminated by an illuminating optic by using a light source emitting illuminating radiation, the illuminating optic having a pupil plane. A first data set is defined to represent the object, a second data set is defined to represent the intensity distribution of the illuminating radiation in the pupil plane of the light source, and the aerial image is calculated from the first and the second data set, in which the resolution of the second data set varies according to the intensity or according to the location of the pupil plane. A microscope includes an imaging optic for imaging an object, a detector for capturing an aerial image of the object, and a processing unit for simulating aerial images generated by the microscope.

Abstract: A method is provided for emulating the imaging of a scanner mask pattern to expose wafers via a mask inspection microscope, in which the mask was corrected by introducing scattering centers. The method includes determining a correlation between the first values of at least one characteristic of aerial images of the mask pattern as produced by a mask inspection microscope and the second values of the at least one characteristic of aerial images of the mask pattern as produced by a scanner, recording a first aerial image of the mask pattern with the mask inspection microscope, determining the first values of the at least one characteristic from the first aerial image, and determining the second values of the at least one characteristic of the first aerial image, using the correlation. A mask inspection microscope is also provided for emulating the imaging of a mask pattern of a scanner to expose wafers, in which the mask was corrected by introducing scattering centers.

Abstract: During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88) that is optically conjugate with respect to the object plane.

Abstract: An illumination optical unit serves for illuminating objects to be examined by a metrology system. The illumination optical unit has an optical pupil shaping assembly for generating a defined distribution of illumination angles of illumination light over an object field in which an object to be examined can be arranged. An optical field shaping assembly for generating a defined intensity distribution of the illumination light over the object field is disposed downstream of the pupil shaping assembly in the beam path of the illumination light. The field shaping assembly has at least one optical field shaping element arranged in the region of a pupil plane of the illumination optical unit. This results in an illumination optical unit which ensures an illumination which can be set in a defined manner with regard to an intensity distribution and an illumination angle distribution over the entire object field.

Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.