Abstract: Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of deposition, at a temperature lower than optimal temperature for deposition of silicon thereon, maintaining the lower than optimal temperature during a first deposition phase, thereafter raising the temperature of the substrate to the optimal temperature while maintaining the other parameters determining the rate of deposition, and maintaining the optimal temperature for the remainder of the deposition.

Abstract: A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

Abstract: A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

Abstract: A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.

Abstract: A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.

Abstract: A U-shaped carrier member formed out of a bent silicon starting rod which is uniformly heatable by means of electric current and which is substantially neither elongated nor contracted relative to the starting rod. A process for the preparation of such carrier member is provided.