Abstract: A module arrangement for power semiconductor devices, includes two or more heat spreading layers with a first surface and a second surface being arranged opposite to the first surface. At least two or more power semiconductor devices are arranged on the first surface of the heat spreading layer and electrically connected thereto. An electrical isolation stack comprising an electrically insulating layer and electrically conductive layers is arranged in contact with the second surface of each heat spreading layer. The at least two or more power semiconductor devices, the heat spreading layers and a substantial part of each of the electrical isolation stacks are sealed from their surrounding environment by a molded enclosure. Accordingly, similar or better thermal characteristic of the module can be achieved instead of utilizing high cost electrically insulating layers, and double side cooling configurations can be easily implemented, without the use of a thick baseplate.

Abstract: A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET into a blocking state.

Abstract: A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode.

Abstract: A semiconductor module, comprises a substrate plate; a semiconductor switch chip and a diode chip attached to a collector conductor on the substrate plate, wherein the diode chip is electrically connected antiparallel to the semiconductor switch chip; wherein the semiconductor switch chip is electrically connected via bond wires to an emitter conductor on the substrate plate providing a first emitter current path, which emitter conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; wherein a gate electrode of the semiconductor switch chip is electrically connected via a bond wire to a gate conductor on the substrate plate providing a gate current path, which gate conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; and wherein a protruding area of the emitter conductor runs besides the diode chip towards the first semiconductor switch chip and the first semiconductor switch chip is directly connected via a bond wire with t

Abstract: A semiconductor module, comprises a substrate plate; a semiconductor switch chip and a diode chip attached to a collector conductor on the substrate plate, wherein the diode chip is electrically connected antiparallel to the semiconductor switch chip; wherein the semiconductor switch chip is electrically connected via bond wires to an emitter conductor on the substrate plate providing a first emitter current path, which emitter conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; wherein a gate electrode of the semiconductor switch chip is electrically connected via a bond wire to a gate conductor on the substrate plate providing a gate current path, which gate conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; and wherein a protruding area of the emitter conductor runs besides the diode chip towards the first semiconductor switch chip and the first semiconductor switch chip is directly connected via a bond wire with t

Abstract: A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.

Abstract: A switching module, intended to be used in a medium or high voltage DC breaker or a DC current limiter, includes at least one power semiconductor switching element, a gate unit arranged to turn the at least one power semiconductor switching element on and off, respectively, according to a switching control signal, and an energy storage capacitor arranged to provide power to a power supply input of the gate unit. The switching module further includes a power transformation device arranged to receive an optical power signal, to transform the optical power signal into an electrical power signal and to provide the electrical power signal to the energy storage capacitor.

Abstract: A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.

Abstract: A voltage converting apparatus includes a series connection of at least four switching elements each including at least one semiconductor device of turn-off type and a free-wheeling diode connected in anti-parallel therewith. The apparatus has a device configured to measure a parameter representative of the voltage across each free-wheeling diode when turned off and an arrangement configured to control the amount of charge stored in each diode at the moment the diode is turned-off by stopping to conduct depending upon the results of the measurement carried out by the device for controlling the voltage across the diode after turn-off thereof.

Abstract: A bipolar punch-through semiconductor device has a semiconductor substrate, which includes at least a two-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact. One of the layers in the two-layer structure is a base layer of the first conductivity type. A buffer layer of the first conductivity type is arranged on the base layer. A first layer includes alternating first regions of the first conductivity type and second regions of the second conductivity type. The first layer is arranged between the buffer layer and the second electrical contact. The second regions are activated regions with a depth of at maximum 2 ?m and a doping profile, which drops from 90% to 10% of the maximum doping concentration within at most 1 ?m.

Abstract: A voltage converting apparatus includes a series connection of at least four switching elements each including at least one semiconductor device of turn-off type and a free-wheeling diode connected in anti-parallel therewith. The apparatus has a device configured to measure a parameter representative of the voltage across each free-wheeling diode when turned off and an arrangement configured to control the amount of charge stored in each diode at the moment the diode is turned-off by stopping to conduct depending upon the results of the measurement carried out by the device for controlling the voltage across the diode after turn-off thereof.

Abstract: A switching module, intended to be used in a medium or high voltage DC breaker or a DC current limiter, includes at least one power semiconductor switching element, a gate unit arranged to turn the at least one power semiconductor switching element on and off, respectively, according to a switching control signal, and an energy storage capacitor arranged to provide power to a power supply input of the gate unit. The switching module further includes a power transformation device arranged to receive an optical power signal, to transform the optical power signal into an electrical power signal and to provide the electrical power signal to the energy storage capacitor.

Abstract: A bipolar punch-through semiconductor device has a semiconductor substrate, which includes at least a two-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact. One of the layers in the two-layer structure is a base layer of the first conductivity type. A buffer layer of the first conductivity type is arranged on the base layer. A first layer includes alternating first regions of the first conductivity type and second regions of the second conductivity type. The first layer is arranged between the buffer layer and the second electrical contact. The second regions are activated regions with a depth of at maximum 2 ?m and a doping profile, which drops from 90% to 10% of the maximum doping concentration within at most 1 ?m.

Abstract: In the case of an electronic circuit, comprising a drive unit, which generates at least one drive signal, two or more power semiconductor switches each having a first and a second main terminal, which power semiconductor switches can be switched synchronously by the drive signal, the first and the second main terminals of the power semiconductor switches in each case being electrically connected in parallel among one another, for each of the power semiconductor switches a first and a second electrically conductive connection for connection to the drive unit, a uniform dynamic current division between the power semiconductor switches is achieved according to the invention by virtue of the fact that a first inductance is provided in each of the first electrically conductive connections, and a second inductance is provided in each of the second electrically conductive connections, the first inductance being coupled to the second inductance for each of the power semiconductor switches.

Abstract: In the case of an electronic circuit, comprising a drive unit (20), which generates at least one drive signal, two or more power semiconductor switches (T1, T2, T3) each having a first and a second main terminal, which power semiconductor switches can be switched synchronously by the drive signal, the first and the second main terminals of the power semiconductor switches (T1, T2, T3) in each case being electrically connected in parallel among one another, for each of the power semiconductor switches (T1, T2, T3) a first and a second electrically conductive connection for connection to the drive unit (20), a uniform dynamic current division between the power semiconductor switches (T1, T2, T3) is achieved according to the invention by virtue of the fact that a first inductance is provided in each of the first electrically conductive connections, and a second inductance is provided in each of the second electrically conductive connections, the first inductance being coupled to the second inductance for each of