Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

Abstract: The invention relates to a semiconductor component with a semiconductor chip and a radiation conversion element which is arranged on the semiconductor chip. The semiconductor chip has an active region which is designed to generate a primary radiation with a peak wavelength, the radiation conversion element has a quantum structure, the peak wavelength of the primary radiation lies in the infrared spectral range, and the quantum structure at least partly converts the primary radiation into a secondary radiation, wherein the emission wavelength of an emission maximum of the secondary radiation is greater than the peak wavelength. The invention additionally relates to a method for producing radiation conversion elements.

Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

Abstract: A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another.

Abstract: A compact housing comprises a one-piece mounting plate made from a metallic material, which is designed to be joined thermally conductively by a main side to an external support not belonging to the compact housing. Furthermore, the compact housing comprises a one-piece housing cover, which is joined permanently to the mounting plate and therewith encloses a volume. In addition, the compact housing contains at least one electrical feedthrough, such that at least one electrically conductive connection may be produced therewith from inside the volume to outside the volume, this connection being insulated electrically from the mounting plate. Within the volume a module is located which is designed to emit electromagnetic radiation. This module is applied directly to the mounting plate, such that the joint face between mounting plate and module is substantially parallel to the main side of the mounting plate joined to the external support.

Abstract: A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another.

Abstract: A semiconductor laser module is disclosed, comprising a module carrier (20) having a mounting area (21), a pump device (1) arranged on the mounting area (21), a surface emitting semiconductor laser (40) arranged on the mounting area (21), and a frequency conversion device (6) arranged on the mounting area (21), wherein the mounting area (21) of the module carrier (20) has an area content of at most 100 mm2.

Abstract: The invention relates to a semiconductor laser device comprising a laser bar (2), a flexible conductor support (10), a supporting body (3) of a metal or a metal alloy and a heat sink (4), which is arranged between the supporting body (3) and the laser bar (2), the laser bar (2) being electrically contacted by the flexible conductor support (10) and the supporting body (3) having a thickness of at least 2 mm. The invention further relates to a method for producing the above-described semiconductor laser device, wherein a synchronous soldering process is used to solder the laser bar (2) to the heat sink (4) by means of a hard solder layer (30) and the heat sink (4) to the supporting body (3) by means of a further hard solder layer (31).

Abstract: An optically pumped semiconductor apparatus having a surface-emitting semiconductor body (1) which has a radiation passage area (1a) which faces away from a mounting plane of the semiconductor body (1), and an optical element (7) which is suitable for directing pump radiation (17) onto the radiation passage area (1a) of the semiconductor body (1).

Abstract: A method for fabricating an optically pumped semiconductor apparatus, having the following steps: provision of a connection carrier assembly (50) comprising a plurality of connection carriers (14) which are permanently connected to one another mechanically, arrangement of a surface-emitting semiconductor body (1) on a connection carrier (14) in the connection carrier assembly (50), and separation of the connection carrier assembly (50) into individual semiconductor apparatuses.

Abstract: An aspherical planoconvex lens (20), containing a material with a refractive index of at least 3.0, in which the height (h) of the convex region (21) is a maximum of one fifth of the thickness (1) of the lens (20). Also disclosed is a laser assembly incorporating such a lens and a method for the manufacture of such a laser assembly.

Abstract: A projection system includes an opto-electromechanical component for speckle reduction, the opto-electromechanical component comprising a micro-motor having a shaft and a translucent light-diffusing element fixed to the shaft.

Abstract: An aspherical planoconvex lens (20), containing a material with a refractive index of at least 3.0, in which the height (h) of the convex region (21) is a maximum of one fifth of the thickness (l) of the lens (20). Also disclosed is a laser assembly incorporating such a lens and a method for the manufacture of such a laser assembly.

Abstract: A surface emitting semiconductor laser includes a semiconductor chip (1), which emits radiation (12) and contains a first resonator mirror (3). A second resonator mirror (6) is arranged outside the semiconductor chip (1). The first resonator mirror (3) and the second resonator mirror (6) form a laser resonator for the radiation (12) emitted by the semiconductor chip (1). The laser resonator contains an interference filter (9, 17), which is formed from an interference layer system comprising a plurality of dielectric layers.

Abstract: The invention relates to a semiconductor laser device comprising a laser bar (2), a flexible conductor support (10), a supporting body (3) of a metal or a metal alloy and a heat sink (4), which is arranged between the supporting body (3) and the laser bar (2), the laser bar (2) being electrically contacted by the flexible conductor support (10) and the supporting body (3) having a thickness of at least 2 mm. The invention further relates to a method for producing the above-described semiconductor laser device, wherein a synchronous soldering process is used to solder the laser bar (2) to the heat sink (4) by means of a hard solder layer (30) and the heat sink (4) to the supporting body (3) by means of a further hard solder layer (31).

Abstract: A semiconductor laser component comprising a semiconductor laser chip (1) provided for generating radiation and an optical device comprising a carrier (7), a radiation deflecting element (8) arranged on the carrier and a mirror arranged on the carrier is proposed, wherein the mirror is formed as an external mirror (9) of an external optical resonator for the semiconductor laser chip (1), the radiation deflecting element is arranged within the resonator, the radiation deflecting element is formed for deflecting at least a portion of a radiation (13, 160) that is generated by the semiconductor laser chip (1) and reflected by the external mirror, the carrier has a lateral main extension direction, and the semiconductor laser chip (1) is disposed downstream of the carrier in a vertical direction with respect to the lateral main extension direction.

Abstract: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

Abstract: An optically pumped, surface-emitting semiconductor laser having a mode-selective apparatus (7) which is intended for suppression of predeterminable, higher resonator modes of the semiconductor laser. The mode-selective apparatus is arranged in the beam path of a pump beam source (2) of the surface-emitting semiconductor laser.

Abstract: In a laser device, a crystal array includes a laser gain crystal and an optically non-linear frequency conversion crystal. A pump source couples at least two mutually spatially separated pump beams into the crystal array. Between two pump beams, a saw kerf of the crystal array extends parallel to the pump beams.

Abstract: A semiconductor laser module is disclosed, comprising a module carrier (20) having a mounting area (21), a pump device (1) arranged on the mounting area (21), a surface emitting semiconductor laser (40) arranged on the mounting area (21), and a frequency conversion device (6) arranged on the mounting area (21), wherein the mounting area (21) of the module carrier (20) has an area content of at most 100 mm2.