Abstract: A mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure of a reticle arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source that emits projection light, at least one illumination beam path, and a first diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane of the illumination beam path, that is optically conjugate with respect to the object plane. The mask inspection microscope has at least one further diaphragm for generating the resultant intensity distribution. The first diaphragm and the at least one further diaphragm influence the resultant intensity distribution of the projection light at least partly at different locations of the pupil plane.

Abstract: The invention relates to a method for measuring structures on masks (1) for photolithography, wherein firstly the mask (1) is mounted on a spatially movable platform (2). The position of the platform (2) is controlled in this case. The structure on the mask (1) is illuminated with illumination light from an illumination light source which emits coherent light. The light coming from the mask (1) is imaged onto a detection device (6) by an imaging optical unit (4) and detected. The detected signals are evaluated in an evaluation device (7) and the positions and dimensions of the structures are determined. The invention also relates to an apparatus by which these method steps, in particular, can be carried out. In this case, the accuracy of the position and dimension determination is increased by the properties of the illumination light being coordinated with the structure to be measured.

Abstract: The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter.

Abstract: During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88) that is optically conjugate with respect to the object plane.

Abstract: The invention relates to a method for measuring structures on masks (1) for photolithography, wherein firstly the mask (1) is mounted on a spatially movable platform (2). The position of the platform (2) is controlled in this case. The structure on the mask (1) is illuminated with illumination light from an illumination light source which emits coherent light. The light coming from the mask (1) is imaged onto a detection device (6) by an imaging optical unit (4) and detected. The detected signals are evaluated in an evaluation device (7) and the positions and dimensions of the structures are determined. The invention also relates to an apparatus by which these method steps, in particular, can be carried out. In this case, the accuracy of the position and dimension determination is increased by the properties of the illumination light being coordinated with the structure to be measured.

Abstract: The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter.

Abstract: During mask inspection predominantly defects of interest which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. A further form of mask inspection microscopes serves for measuring the reticles and is also referred to as a registration tool. The illumination is used by the stated conventional and abaxial illumination settings for optimizing the contrast. The accuracy of the registration measurement is thus increased. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope.

Abstract: A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Abstract: An apparatus for measuring the positions of marks on a mask is provided, said apparatus comprising a mask holder for holding the mask, a recording unit for recording the marks of the mask held by the mask holder, an actuating module for moving the mask holder and the recording unit relative to each other, and an evaluating module, which numerically calculates the gravity-induced sagging of the mask in the mask holder and determines the positions of the marks on the mask, based on the calculated sagging, the recordings made by the recording unit and the relative movement between the mask holder and the recording unit, wherein, prior to calculating said sagging, the present position of the mask in the mask holder is determined and is taken into consideration in said numerical calculation, and/or the geometrical dimensions of the mask are taken into consideration in said numerical calculation of sagging.

Abstract: A method for analyzing the imaging behavior of a first optical imaging element, in which an object is imaged by a second optical imaging element and light in the image plane is detected in a spatially resolved manner. The two optical imaging elements differ in at least one imaging characteristic. Values are determined for intensity and at least one second characteristic and then stored in image points, and processed in an emulation step. An emulation image is produced, taking into account the influence of the second characteristic. A series of images is produced by dividing a range of values of the second characteristic into subdomains, associating an image with each subdomain, and associating the corresponding intensity value with the image points of each image, in case the value of the second characteristic, associated with the image point, falls in the subdomain associated with the respective image.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems is provided. The imaging system for emulating high-aperture scanner systems includes imaging optics, a detector and an evaluating unit, wherein at least one polarization-active optical element is arranged as desired in the imaging beam path for selection of different polarization components of the imaging beam, an optical element with intensity attenuation function can be introduced in the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract: A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract: A polarizer device, for converting an entry light beam into an exit light beam with a defined spatial distribution of polarization states, has an angle varying input device for receiving the entry light beam and for generating a first light beam with a predeterminable first angular distribution of light rays; an angle-selectively active polarization influencing device for receiving the first light beam and for converting the first light beam into a second light beam according to a defined angle function of the polarization state variation; and an angle varying output device for receiving the second light beam and for generating the exit light beam with a second angular distribution from the second light beam. In particular, polarization states with a radial or tangential polarization can be provided cost-effectively in this way.

Abstract: The present invention is directed to an optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract: The present invention is directed to an optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The imaging system, according to the invention, for emulating high-aperture scanner systems comprises imaging optics, a detector and an evaluating unit, wherein at least one polarization-active optical element is arranged as desired in the imaging beam path for selection of different polarization components of the imaging beam, an optical element with intensity attenuation function can be introduced in the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.