Abstract: A device (1?, 1?, 1??) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2?, 2?, 2??) for receiving the melt (16) having a first section (4?, 4?) including a first cross-sectional area and a second section (6?) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8?) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt.

Abstract: A method and a server for providing transaction keys for a transaction system includes transaction units which use pre-delivered transaction keys, and are provided by a key provisioning server and wherein the transaction key usage is checked by a transaction checking server. A transaction key is derived from a master key of a transaction unit, wherein a varying derivation parameter is used in the step of deriving. The step of deriving comprises a first sub step of deriving a key from the master key and a second sub step of deriving the transaction key from the derived key. The first sub step or the second sub step of deriving is performed dependent on a security level of the transaction unit.

Abstract: A method and a server for providing transaction keys for a transaction system includes transaction units which use pre-delivered transaction keys, and are provided by a key provisioning server and wherein the transaction key usage is checked by a transaction checking server. A transaction key is derived from a master key of a transaction unit, wherein a varying derivation parameter is used in the step of deriving. The step of deriving comprises a first sub step of deriving a key from the master key and a second sub step of deriving the transaction key from the derived key. The first sub step or the second sub step of deriving is performed dependent on a security level of the transaction unit.

Abstract: A linear drive including a stator and a rotor configured for linear reciprocal movement along an axis, with the stator having a magnetic-field guide core having a plurality of legs extending each with one foot substantially toward the rotor, with the rotor having a plurality of magnets disposed in a linear array along the direction of the axis, wherein at least one of a respective one of respective lengths of the magnets along the axis and the respective widths of the legs along the axis and the respective spacings of the legs along the axis are different such that force components of the magnets along the axis will substantially compensate each other when the linear drive is in a de-energized state.

Abstract: A linear drive including a stator and a rotor configured for linear reciprocal movement along an axis, with the stator having a magnetic-field guide core having a plurality of legs extending each with one foot substantially toward the rotor, with the rotor having a plurality of magnets disposed in a linear array along the direction of the axis, wherein at least one of a respective one of respective lengths of the magnets along the axis and the respective widths of the legs along the axis and the respective spacings of the legs along the axis are different such that force components of the magnets along the axis will substantially compensate each other when the linear drive is in a de-energized state.

Abstract: In a method and magnetic resonance system for generating a homogenous, radio-frequency excitation field in a spatial examination volume of the magnetic resonance system for a subject examination, the magnetic resonance system having a body coil comprised of N resonator segments or groups and a control and evaluation device for the separate activation of the individual resonator segments electromagnetically decoupled from one another, separate excitation of each individual resonator segment using defined excitation parameters ensue with an examination subject located in the magnetic resonance system and the respective segment-specific or group specific magnetic field distributions in the examination volume are determined. The segment-specific or group-specific magnetic field distributions are computationally superimposed to determine a overall field distribution in the examination volume.

Abstract: In a method and magnetic resonance system for generating a homogenous, radio-frequency excitation field in a spatial examination volume of the magnetic resonance system for a subject examination, the magnetic resonance system having a body coil comprised of N resonator segments or groups and a control and evaluation device for the separate activation of the individual resonator segments electromagnetically decoupled from one another, separate excitation of each individual resonator segment using defined excitation parameters ensue with an examination subject located in the magnetic resonance system and the respective segment-specific or group specific magnetic field distributions in the examination volume are determined. The segment-specific or group-specific magnetic field distributions are computationally superimposed to determine a overall field distribution in the examination volume.

Abstract: J-FET having a first semiconductor region (2, 3), which comprises a first contact (7) with a highly doped contact layer (8) serving as a source disposed between two second contacts (9) serving as a gate on its first surface (4). The three contacts (7, 9) are each connected to a respective second semiconductor region (5, 6). The first and second semiconductor regions (2, 3, 5, 6) are of opposite conductivity types. The second semiconductor regions (5) connected to the second contacts (9) extend in the first semiconductor region (2, 3) below the second semiconductor region (6) that is connected to the first contact (7), with the result that the three second semiconductor regions (5, 6) at least partially overlap in a projection onto a horizontal plane and a channel region (11) is formed between the three second semiconductor regions (5, 6) in the first semiconductor region (2, 3).

Abstract: A method for performing a short-circuit and overload disconnection with a semiconductor component includes the steps of providing a semiconductor component having a drain, a source and a gate. The semiconductor component has a gate-source voltage applied thereto, a current flowing therethrough, and a voltage dropping between the source and the drain. The gate-source voltage at the semiconductor component is adjusted, in dependence of the current flowing through the semiconductor component, such that, after charge carriers in the semiconductor component are depleted, the voltage dropping between the source and the drain assumes a highest possible value still uncritical for the semiconductor component and for a circuit to be disconnected. An algorithm is used for the step of adjusting the voltage dropping between the source and the drain.

Abstract: J-FET having a first semiconductor region (2, 3), which comprises a first contact (7) with a highly doped contact layer (8) serving as a source disposed between two second contacts (9) serving as a gate on its first surface (4). The three contacts (7, 9) are each connected to a respective second semiconductor region (5, 6). The first and second semiconductor regions (2, 3, 5, 6) are of opposite conductivity types. The second semiconductor regions (5) connected to the second contacts (9) extend in the first semiconductor region (2, 3) below the second semiconductor region (6) that is connected to the first contact (7), with the result that the three second semiconductor regions (5, 6) at least partially overlap in a projection onto a horizontal plane and a channel region (11) is formed between the three second semiconductor regions (5, 6) in the first semiconductor region (2, 3).

Abstract: A semiconductor configuration includes a first semiconductor region which has a predetermined conductivity type and a first surface. There is a contact region disposed on the first surface of the first semiconductor region. There is a second semiconductor region disposed within the first semiconductor region underneath the contact region which has a conductivity type opposite the predetermined conductivity type of the first semiconductor region. A first p-n junction having a first depletion zone is formed between the first semiconductor region and the second semiconductor region. The second semiconductor region extends further than the contact region in all directions parallel to the first surface of the first semiconductor region to form at least one lateral channel region with a bottom in the first semiconductor region. The at least one lateral channel region is bounded toward its bottom by the first depletion zone of the first p-n junction.

Abstract: An n- or p-doped semiconductor region accommodates the depletion zone of an active area of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination for the active area is constituted with a semiconductor doped oppositely to the semiconductor region, and is arranged immediately adjacently around the active area on or in a surface of the semiconductor region. The lateral extension of the junction termination is greater than the maximum vertical extension of the depletion zone, and the semiconductor region as well as the junction termination are constituted with a semiconductor with a band gap of at least 2 eV.