Abstract: A method and apparatus for X-ray diffraction analysis of amorphous and/or semi-crystalline materials is able to provide the internal strain map of at least the exposed region of the material, even in the amorphous regions of the material. This is achieved in part by providing several unique and novel analysis methods that are able to extract material properties of semi-crystalline and amorphous materials based on the amorphous diffraction signal. The ability to analyse the amorphous diffraction signal is further facilitated by the use of one or more state-of-the-art energy dispersive detectors, which the inventors have found especially suitable for this purpose. This further allows the use of a polychromatic X-ray source as opposed to the monochromatic X-ray sources typically encountered in X-ray diffraction experiments.

Abstract: A security scanning system comprises a first stage module having at least one X-ray source and at least three first detectors that are line-shaped and arranged in mutually different orientations and have at least dual energy resolution. A group of carry-on items on a carrier are scanned simultaneously in the first stage module solely by transmission contrast radiography generating projections of two-dimensional image data. A processing device reconstructs a 3D representation of the carry-on items and analyzes the 3D representation to determine whether further scanning is required.

Abstract: Detector for detection of particle radiation, particularly particle radiation having an energy in the range of 150 eV to 300 keV, comprising at least one detector element, said detector element comprising a semiconductor detector material, at least a set of line-shaped electrodes conductively connected to at least one surface of said semiconductor detector material, each set comprising a plurality of line-shaped electrodes extending in parallel, and signal processor communicating with said line-shaped electrodes, wherein, in each set, said line-shaped electrodes are distributed with a strip pitch of less than 3 ?m, and that the thickness of said semiconductor detector material is of less than two times the strip pitch of said line-shaped electrodes.

Abstract: Detector for detection of particle radiation, particularly particle radiation having an energy in the range of 150 eV to 300 keV, comprising at least one detector element, said detector element comprising a semiconductor detector material, at least a set of line-shaped electrodes conductively connected to at least one surface of said semiconductor detector material, each set comprising a plurality of line-shaped electrodes extending in parallel, and signal processor communicating with said line-shaped electrodes, wherein, in each set, said line-shaped electrodes are distributed with a strip pitch of less than 3 ?m, and that the thickness of said semiconductor detector material is of less than two times the strip pitch of said line-shaped electrodes.