Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.

Abstract: A device wafer with functional device structures, comprises a semiconductor substrate (SU) as a carrier wafer, a piezoelectric layer (PL) arranged on the carrier wafer and functional device structures (DS) of a first and a second type realized by a structured metallization on top of the piezoelectric layer (PL). A space charge region is formed near the top surface of the carrier wafer to yield enhanced electrical isolation between functional device structures (DS) of first and second type.

Abstract: A device wafer comprises a silicon substrate, a piezoelectric layer arranged on and bonded to the silicon substrate and a structured metallization on top of the piezoelectric layer. The metallization forms functional device structures providing device functions for a plurality of electric devices that are realized on the device wafer. Semiconductor structures realize a semiconductor element providing a semiconductor function in the semiconductor substrate. Electrically conducting connections providing e.g. ohmic contact between the semiconductor structures and functional device structures such that at least one semiconductor function is controlled by a functional device structure or that at least one device function of the functional device structures is controlled by the semiconductor structures.

Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.

Abstract: An electroacoustic component is disclosed. In an embodiment, the electroacoustic component includes a piezoelectric substrate comprising a rare earth metal and calcium oxoborates (RE-COB) and component structures arranged on the substrate, the component structures being suitable for converting between RF signals and acoustic waves, wherein the waves are capable of propagation in a direction x??, and wherein the direction x?? is determined by Euler angles (?, ?, ?), the Euler angles being selected from angle ranges (20-90, 95-160, 15-55), (20-85, 95-160, 95-125) and (15-25, 85-100, 0-175).

Abstract: An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode.

Abstract: A transducer for SAW-type or PSAW-type acoustic waves is proposed in which the dielectric (DK) is applied onto the substrate so that the gap (GP) between the ends of the electrode fingers and the opposite bus electrode is completely filled with said dielectric (DK), but the active area of the transducer, thus transversal overlap area (UB) of the electrode fingers, is not covered by said dielectric.

Abstract: The present invention relates to a one-port resonator (1) operating with surface acoustic waves, comprising an interdigital transducer (2) having a first busbar (6), a second busbar (7) and electrode fingers (8), wherein in an excitation region (10) of the interdigital transducer (2) the electrode fingers (8) are alternately connected to the first busbar (6) and the second busbar (7) in the longitudinal direction (L), wherein the interdigital transducer (2) comprises a first reversed region (11), in which the electrode fingers (8) are alternately connected to the first busbar (6) and the second busbar (7) in the longitudinal direction (L) and which is directly adjacent to the excitation region (10), and wherein that electrode finger (118) of the first reversed region (11) which is directly adjacent to the excitation region (10) in the longitudinal direction (L) and that electrode finger (118) of the excitation region (10) which is directly adjacent thereto are connected to the same busbar (6, 7).

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: An electroacoustic component is disclosed. In an embodiment, the electroacoustic component includes a piezoelectric substrate comprising a rare earth metal and calcium oxoborates (RE-COB) and component structures arranged on the substrate, the component structures being suitable for converting between RF signals and acoustic waves, wherein the waves are capable of propagation in a direction x??, and wherein the direction x?? is determined by Euler angles (?, ?, ?), the Euler angles being selected from angle ranges (20 . . . 90, 95 . . . 160, 15 . . . 55), (20 . . . 85, 95 . . . 160, 95 . . . 125) and (15 . . . 25, 85 . . . 100, 0 . . . 175).

Abstract: The invention concerns a component (B) operating with acoustic waves, in which the reflection and excitation are largely decoupled. For this purpose, a component comprises a dielectric (DL) which is arranged between an electrode finger (EF) and a piezoelectric substrate (PSU) and at least partially overlaps the electrode finger.

Abstract: The present invention relates to an electroacoustic transducer which is arranged in an acoustic track (AS) and on a piezoelectric substrate (11) and which has two electrodes (1, 2) which are arranged on the substrate (11) and which have interengaging electrode fingers (3, 4) for exciting acoustic waves. The electrode fingers (3, 4) of an electrode (1, 2) are interconnected. The transducer also has means for increasing the mass occupation in a central excitation region (ZAB) which runs parallel to the acoustic track (AS), and the mass occupation in the central excitation region (ZAB) is higher than in an edge region (RB) which adjoins the central excitation region (ZAB) from both sides.

Abstract: An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode.

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: The invention concerns a component (B) operating with acoustic waves, in which the reflection and excitation are largely decoupled. For this purpose, a component comprises a dielectric (DL) which is arranged between an electrode finger (EF) and a piezoelectric substrate (PSU) and at least partially overlaps the electrode finger.

Abstract: The present invention relates to an electroacoustic transducer which is arranged in an acoustic track (AS) and on a piezoelectric substrate (11) and which has two electrodes (1, 2) which are arranged on the substrate (11) and which have interengaging electrode fingers (3, 4) for exciting acoustic waves. The electrode fingers (3, 4) of an electrode (1, 2) are interconnected. The transducer also has means for increasing the mass occupation in a central excitation region (ZAB) which runs parallel to the acoustic track (AS), and the mass occupation in the central excitation region (ZAB) is higher than in an edge region (RB) which adjoins the central excitation region (ZAB) from both sides.

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: An electroacoustic component includes a carrier substrate and a piezosubstrate having piezoelectric properties. The electroacoustic component also includes a layer system between the carrier substrate and the piezosubstrate.

Abstract: An electroacoustic component includes a substrate that includes a quartz single crystal. The quartz single crystal has a first Euler angle ?: ?5°???5°, a second Euler angle ?, and a third Euler angle ?. A contiguous region of the quartz single crystal has the following vertices Pi(?i, ?i): (23°, 20°), (60°, 17°), (110°, 30°), (105°, 42°), (60°, 30°), (23°, 25°).