Patents by Inventor Umberto Minucci

Umberto Minucci has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11437103
    Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: September 6, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Umberto Minucci, Tommaso Vali, Fernanda Irrera, Luca De Santis
  • Publication number: 20210090656
    Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.
    Type: Application
    Filed: December 4, 2020
    Publication date: March 25, 2021
    Inventors: Umberto Minucci, Tommaso Vali, Fernanda Irrera, Luca De Santis
  • Patent number: 10861551
    Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: December 8, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Umberto Minucci, Tommaso Vali, Fernanda Irrera, Luca De Santis
  • Publication number: 20200211648
    Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.
    Type: Application
    Filed: December 28, 2018
    Publication date: July 2, 2020
    Inventors: Umberto Minucci, Tommaso Vali, Fernanda Irrera, Luca De Santis