Patents by Inventor Umberto Stagnitti

Umberto Stagnitti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method
    Patent number: 6709955
    Abstract: A method of fabricating electronic devices, integrated monolithically in a semiconductor substrate having at least one non-active area contiguous with at least one device active area, which method comprises at least one step of implanting ions of a noble gas, followed by a thermal treatment to form getter microcavities in the semiconductor by evaporation of the noble gas, wherein the implanting step is carried out in the non-active area of the semiconductor.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: March 23, 2004
    Assignee: STMicroelectronics S.r.l.
    Inventors: Mario Saggio, Vito Raineri, Umberto Stagnitti, Sebastiano Mugavero
  • Method for manufacturing electronic devices in semiconductor substrates provided with gettering sites
    Patent number: 6451672
    Abstract: This invention relates to a method for manufacturing electronic devices integrated monolithically in a semiconductor substrate delimited by two opposed front and back surfaces of a semiconductor material wafer. The method comprises at least a step of implanting ions of a noble gas, followed by a thermal treatment directed to form gettering microvoids in the semiconductor by evaporation of the gas. The ion implanting step is carried out through the back surface of the semiconductor wafer prior to starting the manufacturing process for the electronic devices, and also can be before the step of cleaning the front surface of the wafer.
    Type: Grant
    Filed: April 17, 2000
    Date of Patent: September 17, 2002
    Assignee: STMicroelectronics S.r.l.
    Inventors: Davide Caruso, Vito Raineri, Mario Saggio, Umberto Stagnitti
  • Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method
    Publication number: 20020001923
    Abstract: A method of fabricating electronic devices, integrated monolithically in a semiconductor substrate having at least one non-active area contiguous with at least one device active area, which method comprises at least one step of implanting ions of a noble gas, followed by a thermal treatment to form getter microcavities in the semiconductor by evaporation of the noble gas, wherein the implanting step is carried out in the non-active area of the semiconductor.
    Type: Application
    Filed: April 27, 2001
    Publication date: January 3, 2002
    Inventors: Mario Saggio, Vito Raineri, Umberto Stagnitti, Sebastiano Mugavero