Patents by Inventor Umesh Kelkar
Umesh Kelkar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220245307Abstract: Embodiments described herein include processes for generating a hybrid model for modeling processes in semiconductor processing equipment. In a particular embodiment, method of creating a hybrid machine learning model comprises identifying a first set of cases spanning a first range of process and/or hardware parameters, and running experiments in a lab for the first set of cases. The method may further comprise compiling experimental outputs from the experiments, and running physics based simulations for the first set of cases. In an embodiment, the method may further comprise compiling model outputs from the simulations, and correlating the model outputs with the experimental outputs with a machine learning algorithm to provide the hybrid machine learning model.Type: ApplicationFiled: February 3, 2021Publication date: August 4, 2022Inventors: Prashanth Kothnur, Karthik Ramanathan, Ajit Balakrishna, Kartik Shah, Umesh Kelkar, Vishwas Pandey, Prasoon Shukla, Sushil Arun Samant
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Patent number: 9062372Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.Type: GrantFiled: October 31, 2007Date of Patent: June 23, 2015Assignee: Applied Materials, Inc.Inventors: Praburam Gopalraja, Jianming Fu, Xianmin Tang, John C. Forster, Umesh Kelkar
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Patent number: 8647484Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.Type: GrantFiled: November 12, 2006Date of Patent: February 11, 2014Assignee: Applied Materials, Inc.Inventors: Alan Alexander Ritchie, Donny Young, Ilyoung (Richard) Hong, Kathleen A. Scheible, Umesh Kelkar
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Patent number: 7504006Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.Type: GrantFiled: July 31, 2003Date of Patent: March 17, 2009Assignee: Applied Materials, Inc.Inventors: Praburam Gopalraja, Jianming Fu, Xianmin Tang, John C. Forster, Umesh Kelkar
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Publication number: 20080142359Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.Type: ApplicationFiled: October 31, 2007Publication date: June 19, 2008Applicant: APPLIED MATERIALS, INC.Inventors: Praburam GOPALRAJA, Jianming FU, Xianmin TANG, John C. FORSTER, Umesh KELKAR
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Publication number: 20070170052Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.Type: ApplicationFiled: November 12, 2006Publication date: July 26, 2007Inventors: Alan Ritchie, Donny Young, Ilyoung (Richard) Hong, Kathleen Scheible, Umesh Kelkar
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Publication number: 20040222082Abstract: In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500 eV are directed to the wafer at between 10 and 35° to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.Type: ApplicationFiled: May 5, 2003Publication date: November 11, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Praburam Gopalraja, Xianmin Tang, Jianming Fu, Mark A. Perrin, Jean Yue (Phillip) Wang, Arvind Sundarrajan, Hong Zhang, Jick Yu, Umesh Kelkar, Zheng Xu, Fusen Chen
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Patent number: 6790326Abstract: A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.Type: GrantFiled: June 13, 2002Date of Patent: September 14, 2004Assignee: applied materials, inc.Inventors: Anantha Subramani, Umesh Kelkar, Jianming Fu, Praburam Gopalraja
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Publication number: 20040094402Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.Type: ApplicationFiled: July 31, 2003Publication date: May 20, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Praburam Gopalraja, Jianming Fu, Xianmin Tang, John C. Forster, Umesh Kelkar
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Publication number: 20020148725Abstract: A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.Type: ApplicationFiled: June 13, 2002Publication date: October 17, 2002Inventors: Anantha Subramani, Umesh Kelkar, Jianming Fu, Praburam Gopalraja
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Patent number: 6406599Abstract: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well.Type: GrantFiled: November 1, 2000Date of Patent: June 18, 2002Assignee: Applied Materials, Inc.Inventors: Anantha Subramani, Umesh Kelkar, Jianming Fu, Praburam Gopalraja
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Patent number: 6190037Abstract: The present invention provides an apparatus and method for measuring the temperature of a moving radiant object. A probe, such as a pyrometer, is disposed in an opening of a vacuum chamber adjacent a radiation transparent window. The probe defines an optical path which intercepts the radiant object entering or exiting a processing chamber. The radiant object is moved through the optical path and emits electromagnetic waves. The electromagnetic waves are collected by the probe and transmitted to a signal processing unit where the waves are detected and converted to a temperature reading. If desired, the accumulated data may then be used to generate a cooling curve representing the thermal effects experienced by the radiant object. Extrapolation or correlation methods may be used to extend the cooling curve to points in time prior to or after the data collected by the probe.Type: GrantFiled: February 19, 1999Date of Patent: February 20, 2001Assignee: Applied Materials, Inc.Inventors: Ashok Das, Nety Krishna, Marc Schweitzer, Nalin Patadia, Wei Yang, Umesh Kelkar, Vijay Parkhe, Scot Petitt, Nitin Khurana