Abstract: A system selecting a process key factor in a commercial chemical process, includes: a data extraction unit that extracts tag data in units of a set period; an outlier discrimination unit that discriminates and aggregates outliers by tag by using an outlier extraction reference master; an outlier processing unit that generates an input mart draft excluding the outliers; a derived variable generation unit that generates derived variables for each tag, and generates an advanced input mart having the derived variable added thereto; a yield calculation unit that backs up the result of calculation of a yield by realizing a target value via exclusion and correction of the outliers; and a key factor extraction unit that extracts a yield key factor by calculating importance of each tag, and backs up importance data for each tag.

Abstract: A system for predicting process changes by using key factors in a commercial chemical process, includes: a key factor extraction and individual tag importance backup unit that extracts yield key factors by calculating the importance of each tag, and backs up importance data for each tag; and a yield prediction model training and yield prediction performing unit that performs yield prediction model training by using the importance of each tag accumulated in the key factor extraction and individual tag importance backup unit, and performs yield prediction so as to output a yield prediction result, evaluates performance, and selects an optimal prediction model.

Abstract: A method of decoding data of a non-volatile memory device is provided. The method includes a first decoding operation of reading first hard decision data from the non-volatile memory device using a first hard decision read level and performing decoding using the first hard decision data; a second decoding operation of reading first soft decision data from the non-volatile memory device when the decoding fails in the first decoding operation, and performing decoding using the first soft decision; and a third decoding operation of changing from the first hard decision read level to a second hard decision read level when the decoding fails in the second decoding operation, reading second hard decision data using the second hard decision read level, and performing decoding either using the second hard decision data or using both the second hard decision data and the first soft decision data.

Abstract: A method of reading multi-bit data stored in a memory cell of a flash memory includes attempting to perform hard decision (HD) decoding on output data from the flash memory, and performing soft decision (SD) decoding on the output data when the HD decoding cannot be performed. The performing of the SD decoding includes: changing a maximum number of iterations according to a threshold voltage distribution of the memory cell; and performing the SD decoding based on the changed maximum number of iterations.

Abstract: A method of operating a memory controller includes; receiving hard decision data and first soft decision data from a non-volatile memory device, performing a first ECC decoding operation using the hard decision data and the first soft decision data: and then determining a second soft decision read voltage or reclaim operation of the non-volatile memory device based on the number of iteration operation of the first ECC (error correction code).

Abstract: A method of estimating a deterioration state of a memory device comprises reading data from selected memory cells connected to a selected wordline of a memory cell array by applying to the selected wordline a plurality of distinct read voltages having values corresponding to at least one valley of threshold voltage distributions of the selected memory cells, generating quality estimation information indicating states of the threshold voltage distributions using the data read from the selected memory cells, and determining a deterioration state of a storage area including the selected memory cells based on the generated quality estimation information.

Abstract: A method of decoding data of a non-volatile memory device is provided. The method includes a first decoding operation of reading first hard decision data from the non-volatile memory device using a first hard decision read level and performing decoding using the first hard decision data; a second decoding operation of reading first soft decision data from the non-volatile memory device when the decoding fails in the first decoding operation, and performing decoding using the first soft decision; and a third decoding operation of changing from the first hard decision read level to a second hard decision read level when the decoding fails in the second decoding operation, reading second hard decision data using the second hard decision read level, and performing decoding either using the second hard decision data or using both the second hard decision data and the first soft decision data.

Abstract: A method of reading multi-bit data stored in a memory cell of a flash memory includes attempting to perform hard decision (HD) decoding on output data from the flash memory, and performing soft decision (SD) decoding on the output data when the HD decoding cannot be performed. The performing of the SD decoding includes: changing a maximum number of iterations according to a threshold voltage distribution of the memory cell; and performing the SD decoding based on the changed maximum number of iterations.

Abstract: A method of operating a memory controller includes; receiving hard decision data and first soft decision data from a non-volatile memory device, performing a first ECC decoding operation using the hard decision data and the first soft decision data: and then determining a second soft decision read voltage or reclaim operation of the non-volatile memory device based on the number of iteration operation of the first ECC (error correction code).

Abstract: A method of estimating a deterioration state of a memory device comprises reading data from selected memory cells connected to a selected wordline of a memory cell array by applying to the selected wordline a plurality of distinct read voltages having values corresponding to at least one valley of threshold voltage distributions of the selected memory cells, generating quality estimation information indicating states of the threshold voltage distributions using the data read from the selected memory cells, and determining a deterioration state of a storage area including the selected memory cells based on the generated quality estimation information.