Abstract: A magnetic memory device includes a conductive line extended in a first direction and a magnetic track line provided on a top surface of the conductive line and extended in the first direction. The magnetic track line includes a domain injection portion and a line portion, which is extended from the domain injection portion in the first direction. The domain injection portion has a tapered shape in an opposite direction of the first direction. The conductive line has a linewidth in a second direction, and the first and second directions are parallel to the top surface of the conductive line and are perpendicular to each other. Below the domain injection portion, a first linewidth of the conductive line remains constant in the opposite direction of the first direction.

Abstract: A magnetic memory device includes a conductive line extended in a first direction, a magnetic track line provided on the conductive line and extended in the first direction, and a non-magnetic line provided on the magnetic track line and extended in the first direction. The magnetic track line includes a lower magnetic layer and an upper magnetic layer stacked on the conductive line, an exchange coupling layer between the lower and upper magnetic layers, and a spacer layer between the exchange coupling layer and the upper magnetic layer. The exchange coupling layer is in contact with a bottom surface of the spacer layer, and the lower and upper magnetic layers are antiferromagnetically coupled with each other by the exchange coupling layer.

Abstract: Disclosed are a memristor element, a synapse element and a neuromorphic processor including the same. The memristor element includes a free layer including a domain wall; and a fixed layer including a material of which a magnetization direction is fixed, wherein a position of the domain wall in the free layer is changeable based on a spin orbit torque (SOT) generated by a current introduced from an outside, and wherein a resistance value, measured through both ends of the fixed layer, is based on the position of the domain wall and on a Hall voltage.

Abstract: A magnetic memory device comprising a substrate, a first dielectric pattern on the substrate, a dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern, a first magnetic pattern between the first dielectric pattern and the dielectric pillar and including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part, a second magnetic pattern on the first dielectric pattern and surrounding a lateral surface of the second part, and a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern. The first magnetic pattern extends in a third direction perpendicular to a top surface of the substrate.

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.

Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.

Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.

Abstract: A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.

Abstract: A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

Abstract: A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.

Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.

Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.

Abstract: A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.

Abstract: A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.