Patents by Inventor Ung-hwan Pl

Ung-hwan Pl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11037611
    Abstract: A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: June 15, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eunsun Noh, Juhyun Kim, Ung Hwan Pl
  • Publication number: 20190295616
    Abstract: A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.
    Type: Application
    Filed: March 23, 2018
    Publication date: September 26, 2019
    Applicants: Samsung Electronics Co., Ltd., MicroSense, LLC
    Inventors: Eunsun NOH, Juhyun KIM, Ung Hwan Pl, Ferenc Z VAJDA, Rachid MAFHOUM
  • Patent number: 8045371
    Abstract: An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: October 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-chul Lee, Hyung-soon Shin, Seung-jun Lee, Sun-ae Seo, Young-jin Cho, Ung-hwan Pl, Ji-young Bae, Jin-seong Heo
  • Patent number: 8018764
    Abstract: A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-chul Lee, Jai-kwang Shin, Sun-ae Seo, Young-jin Cho, Ung-hwan Pl, Ji-young Bae
  • Publication number: 20100149863
    Abstract: A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.
    Type: Application
    Filed: July 30, 2009
    Publication date: June 17, 2010
    Inventors: Sung-chul Lee, Jai-kwang Shin, Sun-ae Seo, Young-jin Cho, Ung-hwan Pl, Ji-young Bae