Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Abstract: An organic memory device and a method of manufacturing the same are disclosed. The organic memory device includes an electron channel layer including an organic layer, in which nano particles of a uniform size are dispersed, interposed between metal electrodes, thus having electrical bistability. The organic memory device uses a change of electrical conductivity which results from a substantial change of the electrical structure of the electron channel layer when a voltage is applied. The organic memory device can be integrated using a simple manufacturing process, and ensures uniformity between devices due to the threshold voltage characteristics, even when highly miniaturized.

Abstract: A molecular switching device including: a channel unit which constructs an electron channel for allowing electron to flow therethrough; an electrode which is in contact with both ends of the channel unit; and a control unit which is connected with the channel unit through a connection unit to have an oxidation state or an electron density differentiated depending on voltage applied through the electrode, thereby varying an electric conductivity of the channel unit.

Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.