Abstract: The present invention relates to an anode active material including a composite of lithium titanium oxide (LTO), a silicon-containing material and crystalline carbon, a method for manufacturing the same, and a lithium secondary battery including the same. The composite according to the present invention satisfies high capacity, high energy density and high lifespan stability, improves fast charging characteristics, and also improves mechanical strength, so a lithium secondary battery using the composite as an anode active material can be usefully used for a next-generation electric vehicle, energy storage systems, etc.

Abstract: A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.

Abstract: A negative electrode and a lithium battery including the same, the negative electrode including nanotubes including a Group 14 metal/metalloid, disposed on a conductive substrate.

Abstract: A negative electrode includes nanotubes including a metal/metalloid, disposed on a conductive substrate, and having opened ends. A lithium battery includes the negative electrode.

Abstract: In an aspect, a negative electrode for a lithium secondary battery and a method of manufacturing the same is provided. The negative electrode for the lithium secondary battery includes a negative active material layer.

Abstract: A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.

Abstract: A method of fabricating a semiconductor device includes forming an active region in a semiconductor substrate, forming a plurality of dummy gates on the active region, the plurality of dummy gates having a gate mask disposed thereon, forming an interlayer insulating layer on the gate mask, and performing a one-time chemical mechanical polishing (CMP) process by using a slurry composition capable of polishing the interlayer insulating layer and the gate mask until top surfaces of the dummy gates are exposed.

Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.

Abstract: A cathode, a method of forming the cathode and a lithium battery including the cathode. The cathode includes a current collector and a cathode active material layer disposed on the current collector; the cathode active material layer includes a lithium transition metal oxide having a spinel structure, a conductive agent, and a binder; and at least a portion of a surface of the cathode active material layer is fluorinated.

Abstract: An anode active material, an anode including the anode active material, a lithium battery including the anode, and a method of preparing the anode active material. The anode active material includes: a multilayer metal nanotube including: an inner layer; and an outer layer on the inner layer, wherein the inner layer includes a first metal having an atomic number equal to 13 or higher, and the outer layer includes a second metal different from the first metal.

Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.

Abstract: An anode active material, an anode including the anode active material, a lithium battery including the anode, and a method of preparing the anode active material. The anode active material includes: a multilayer metal nanotube including: an inner layer; and an outer layer on the inner layer, wherein the inner layer includes a first metal having an atomic number equal to 13 or higher, and the outer layer includes a second metal different from the first metal.

Abstract: A negative electrode and a lithium battery including the same, the negative electrode including nanotubes including a Group 14 metal/metalloid, disposed on a conductive substrate.

Abstract: A negative electrode and a lithium battery including the same, the negative electrode including nanotubes including a Group 14 metal/metalloid, disposed on a conductive substrate.

Abstract: In an aspect, a negative electrode for a lithium secondary battery and a method of manufacturing the same is provided. The negative electrode for the lithium secondary battery includes a negative active material layer.

Abstract: An electrode for a fuel cell including a gas diffusion layer, and a catalyst layer bound to at least one surface of the gas diffusion layer and including a catalyst and a binder; and a fuel cell including the electrode.

Abstract: Disclosed herein are a dispersed solution of carbon nanotubes including carbon nanotubes, an organic solvent, a spacer, and a dispersant, and a method of preparing the same. The dispersed solution of the carbon nanotubes includes both the spacer, which reduces the van der Waals force of the carbon nanotubes and prevents bundling of the carbon nanotubes, and the dispersant, which maintains the debundling and stability of the carbon nanotubes, thereby improving the dispersibility of the carbon nanotubes. The method of preparing the dispersed solution of the carbon nanotubes can easily produce a dispersed solution of carbon nanotubes without performing a separate chemical treatment.

Abstract: A catalyst slurry, an electrode prepared by using the same, and a fuel cell including the electrode. The catalyst slurry includes: a catalyst material; a binder; and a solvent including a first liquid for dissolving the binder and a second liquid having a viscosity that is higher than that of the first liquid.

Abstract: Provided are a dispersed solution of carbon nanotubes including carbon nanotubes, an organic solvent, a spacer, and a dispersant. The dispersed solution of the carbon nanotubes includes both the spacer reducing the van der Waals force of the carbon nanotubes and preventing the bundling of the carbon nanotubes and the dispersant maintaining the debundling and stability of the carbon nanotubes, thereby improving the dispersibility of the carbon nanotubes. The preparation method of the dispersed solution of the carbon nanotubes can easily produce a dispersed solution of carbon nanotubes without separately performing a chemical treatment.

Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.