Patents by Inventor Unho Cha

Unho Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Defect detection structures, semiconductor devices including the same, and methods of detecting defects in semiconductor dies
    Patent number: 11796587
    Abstract: A semiconductor device includes a semiconductor die, a defect detection structure and an input-output circuit. The semiconductor die includes a central region and a peripheral region surrounding the central region. The peripheral region includes a left-bottom corner region, a left-upper corner region, a right-upper corner region and a right-bottom corner region. The defect detection structure is formed in the peripheral region. The defect detection structure includes a first conduction loop passing through the left-bottom corner region, a second conduction loop passing through the right-bottom corner region, a third conduction loop passing through the left-bottom corner region and the left-upper corner region, a fourth conduction loop passing through the right-bottom corner region and the right-upper corner region, and a shielding loop to shield electrical interference between the first through fourth conduction loops.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: October 24, 2023
    Inventors: Junghyun Roh, Minjae Lee, Unho Cha
  • DEFECT DETECTION STRUCTURES, SEMICONDUCTOR DEVICES INCLUDING THE SAME, AND METHODS OF DETECTING DEFECTS IN SEMICONDUCTOR DIES
    Publication number: 20210311104
    Abstract: A semiconductor device includes a semiconductor die, a defect detection structure and an input-output circuit. The semiconductor die includes a central region and a peripheral region surrounding the central region. The peripheral region includes a left-bottom corner region, a left-upper corner region, a right-upper corner region and a right-bottom corner region. The defect detection structure is formed in the peripheral region. The defect detection structure includes a first conduction loop passing through the left-bottom corner region, a second conduction loop passing through the right-bottom corner region, a third conduction loop passing through the left-bottom corner region and the left-upper corner region, a fourth conduction loop passing through the right-bottom corner region and the right-upper corner region, and a shielding loop to shield electrical interference between the first through fourth conduction loops.
    Type: Application
    Filed: October 1, 2020
    Publication date: October 7, 2021
    Inventors: Junghyun Roh, Minjae Lee, Unho Cha