Patents by Inventor Unryu Ogawa
Unryu Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200392625Abstract: Described herein is a technique capable of suppressing or preventing an inside of a source gas nozzle from being heated to a substrate processing temperature when a source gas is supplied through the source gas nozzle into a reaction tube in which a substrate is accommodated. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube made of a first material and capable of accommodating a substrate; and a source gas nozzle provided in the reaction tube and at least a part thereof made of a second material whose reflectance is higher than that of the first material and whose surface is rougher than that of the first material by bubbles contained therein, wherein a source gas is supplied through the source gas nozzle.Type: ApplicationFiled: September 1, 2020Publication date: December 17, 2020Inventors: Yuji TAKEBAYASHI, Unryu OGAWA, Toshiki FUJINO, Yukihito HADA, Naoko TSUNODA
-
Patent number: 10192735Abstract: A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.Type: GrantFiled: August 3, 2017Date of Patent: January 29, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
-
Patent number: 10163663Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.Type: GrantFiled: November 22, 2017Date of Patent: December 25, 2018Assignee: Kokusai Electric CorporationInventors: Toshihiko Yonejima, Masanori Okuno, Masakazu Sakata, Hiroki Okamiya, Takeshi Kasai, Katsuaki Nogami, Takashi Ozaki, Kenji Kanayama, Unryu Ogawa, Seiyo Nakashima, Tomoyuki Yamada, Masayuki Yamada
-
Publication number: 20180144953Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.Type: ApplicationFiled: November 22, 2017Publication date: May 24, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Toshihiko YONEJIMA, Masanori OKUNO, Masakazu SAKATA, Hiroki OKAMIYA, Takeshi KASAI, Katsuaki NOGAMI, Takashi OZAKI, Kenji KANAYAMA, Unryu OGAWA, Seiyo NAKASHIMA, Tomoyuki YAMADA, Masayuki YAMADA
-
Publication number: 20170338106Abstract: A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.Type: ApplicationFiled: August 3, 2017Publication date: November 23, 2017Inventors: Tatsushi UEDA, Tadashi TERASAKI, Unryu OGAWA, Akito HIRANO
-
Patent number: 9754780Abstract: A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.Type: GrantFiled: December 1, 2015Date of Patent: September 5, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
-
Publication number: 20160086797Abstract: A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.Type: ApplicationFiled: December 1, 2015Publication date: March 24, 2016Inventors: Tatsushi UEDA, Tadashi TERASAKI, Unryu OGAWA, Akito HIRANO
-
Patent number: 9236242Abstract: A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.Type: GrantFiled: November 8, 2012Date of Patent: January 12, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
-
Publication number: 20150089924Abstract: An exhaust gas processing system includes a cylindrical tube through which an exhaust gas of an engine passes, a sensor configured to detect information regarding the exhaust gas discharged from the engine, a coil antenna provided on an outer periphery of the cylindrical tube and connected to a high-frequency power supply, and a control unit configured to control output power of the high-frequency power supply. The control unit controls output power of the high-frequency power supply based on the information detected by the sensor.Type: ApplicationFiled: March 14, 2013Publication date: April 2, 2015Applicant: Hitachi Kokusai Electric Inc.Inventors: Unryu Ogawa, Kotaro Takenaga, Katsumi Takahashi
-
Patent number: 8987645Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.Type: GrantFiled: September 22, 2011Date of Patent: March 24, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Unryu Ogawa, Masahisa Okuno, Tokunobu Akao, Shinji Yashima, Atsushi Umekawa, Kaichiro Minami
-
Patent number: 8557720Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.Type: GrantFiled: September 23, 2011Date of Patent: October 15, 2013Assignee: Hitachi Kokusai Electric, Inc.Inventors: Tokunobu Akao, Unryu Ogawa, Masahisa Okuno, Shinji Yashima, Atsushi Umekawa, Kaichiro Minami
-
Patent number: 8486222Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.Type: GrantFiled: September 22, 2011Date of Patent: July 16, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Tokunobu Akao, Unryu Ogawa, Masahisa Okuno, Shinji Yashima, Atsushi Umekawa, Kaichiro Minami
-
Patent number: 8334215Abstract: A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.Type: GrantFiled: February 4, 2009Date of Patent: December 18, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
-
Publication number: 20120129358Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.Type: ApplicationFiled: September 22, 2011Publication date: May 24, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Unryu OGAWA, Masahisa OKUNO, Tokunobu AKAO, Shinji YASHIMA, Atsushi UMEKAWA, Kaichiro MINAMI
-
Publication number: 20120108080Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.Type: ApplicationFiled: September 22, 2011Publication date: May 3, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tokunobu AKAO, Unryu OGAWA, Masahisa OKUNO, Shinji YASHIMA, Atsushi UMEKAWA, Kaichiro MINAMI
-
Publication number: 20120108061Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.Type: ApplicationFiled: September 23, 2011Publication date: May 3, 2012Applicant: HITACHI KOKUSAI ELECTRIC, INCInventors: Tokunobu AKAO, Unryu OGAWA, Masahisa OKUNO, Shinji YASHIMA, Atsushi UMEKAWA, Kaichiro MINAMI
-
Patent number: 8066894Abstract: A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.Type: GrantFiled: March 14, 2006Date of Patent: November 29, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
-
Patent number: 7795156Abstract: Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.Type: GrantFiled: October 31, 2005Date of Patent: September 14, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Terasaki, Akito Hirano, Masanori Nakayama, Unryu Ogawa
-
Publication number: 20090169768Abstract: A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.Type: ApplicationFiled: February 4, 2009Publication date: July 2, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
-
Publication number: 20090050056Abstract: A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit.Type: ApplicationFiled: March 27, 2008Publication date: February 26, 2009Inventors: Unryu OGAWA, Katsuhiko YAMAMOTO, Masanori NAKAYAMA