Patents by Inventor Upali Jayamaha

Upali Jayamaha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic devices including doped semiconductor films
    Patent number: 11843070
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: December 12, 2023
    Assignee: First Solar, Inc.
    Inventors: Anke Abken, Markus Gloeckler, Roger T. Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick C. Powell
  • Photovoltaic Devices Including Nitrogen-Containing Metal Contact
    Publication number: 20230317864
    Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.
    Type: Application
    Filed: June 6, 2023
    Publication date: October 5, 2023
    Applicant: First Solar, Inc.
    Inventors: Upali Jayamaha, Michael T. Steele, Syed Zafar
  • Photovoltaic devices including nitrogen-containing metal contact
    Patent number: 11695085
    Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: July 4, 2023
    Assignee: First Solar, Inc.
    Inventors: Upali Jayamaha, Michael T. Steele, Syed Zafar
  • PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS
    Publication number: 20210091250
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: December 4, 2020
    Publication date: March 25, 2021
    Applicant: First Solar, Inc.
    Inventors: Anke Abken, Markus Gloeckler, Roger T. Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick C. Powell
  • Photovoltaic devices including doped semiconductor films
    Patent number: 10861994
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: December 8, 2020
    Assignee: First Solar, Inc.
    Inventors: Anke Abken, Markus Gloeckler, Roger Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick Powell
  • PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS
    Publication number: 20190296180
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: June 10, 2019
    Publication date: September 26, 2019
    Applicant: First Solar, Inc.
    Inventors: Anke Abken, Markus Gloeckler, Roger Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick Powell
  • Photovoltaic devices including doped semiconductor films
    Patent number: 10319873
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: June 11, 2019
    Assignee: First Solar, Inc.
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Photovoltaic Devices Including Nitrogen-Containing Metal Contact
    Publication number: 20190148571
    Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.
    Type: Application
    Filed: January 11, 2019
    Publication date: May 16, 2019
    Applicant: First Solar, Inc.
    Inventors: Upali Jayamaha, Michael T. Steele, Syed Zafar
  • PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS
    Publication number: 20160126398
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: January 13, 2016
    Publication date: May 5, 2016
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Photovoltaic devices including doped semiconductor films
    Patent number: 9263608
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: February 16, 2016
    Assignee: First Solar, Inc.
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • PHOTOVOLTAIC DEVICES INCLUDING NITROGEN-CONTAINING METAL CONTACT
    Publication number: 20150380601
    Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.
    Type: Application
    Filed: September 8, 2015
    Publication date: December 31, 2015
    Inventors: Syed Zafar, Upali Jayamaha, Michael T. Steele
  • Photovoltaic devices including nitrogen-containing metal contact
    Patent number: 9147778
    Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.
    Type: Grant
    Filed: November 5, 2007
    Date of Patent: September 29, 2015
    Assignee: First Solar, Inc.
    Inventors: Syed Zafar, Upali Jayamaha, Michael T. Steele
  • PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS
    Publication number: 20090194166
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: October 31, 2008
    Publication date: August 6, 2009
    Applicant: First Solar, Inc.
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Photovoltaic device including a tin oxide protective layer
    Publication number: 20080128022
    Abstract: A photovoltaic device can include a protective layer including a tin oxide over a transparent conducting layer to stabilize the transparent conducting layer.
    Type: Application
    Filed: November 8, 2007
    Publication date: June 5, 2008
    Applicant: First Solar, Inc.
    Inventors: Dale Roberts, Upali Jayamaha
  • Photovoltaic devices including nitrogen-containing metal contact
    Publication number: 20080110498
    Abstract: ABSTRACT A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.
    Type: Application
    Filed: November 5, 2007
    Publication date: May 15, 2008
    Applicant: First Solar, Inc.
    Inventors: Syed Zafar, Upali Jayamaha, Michael T. Steele