Abstract: Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. The structure comprises a drain and a source in a semiconductor substrate. The source includes a source region having a first terminating end, a second terminating end, and a length between the first terminating end and the second terminating end. The structure further comprises a shallow trench isolation region in the semiconductor substrate. The shallow trench isolation region surrounds the drain. The structure further comprises a gate that surrounds the shallow trench isolation region and the drain. The gate has a side section between the drain and the source region, the side section of the gate has a width, and the gate has a length in a direction transverse to the width. The length of the source region is substantially equal to the length of the gate.

Abstract: Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. The structure includes a substrate, a source region and a drain region in the substrate, a buffer dielectric layer positioned on the substrate adjacent to the drain region, and a gate electrode laterally positioned between the source region and the drain region. The gate electrode includes a portion that overlaps with the buffer dielectric layer, and the portion of the gate electrode includes notches.

Abstract: Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. The structure includes a semiconductor substrate, a body well in the semiconductor substrate, a source region in the body well, a drain well in the semiconductor substrate, a drain region in the drain well, and a gate electrode laterally positioned between the source region and the drain region. The drain well includes an edge adjacent to the body well, and the edge of the drain well has a spaced relationship with the body well.

Abstract: Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. The structure includes a substrate, a source region and a drain region in the substrate, a buffer dielectric layer positioned on the substrate adjacent to the drain region, and a gate electrode laterally positioned between the source region and the drain region. The gate electrode includes a portion that overlaps with the buffer dielectric layer, and the portion of the gate electrode includes notches.

Abstract: Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. First and second source/drain regions are formed in a substrate, and a gate electrode is formed over the substrate. The gate electrode has a sidewall, and the gate electrode is laterally positioned between the first source/drain region and the second source/drain region. A buffer dielectric layer is formed that includes a first dielectric layer having a first portion positioned between the substrate and the gate electrode. The dielectric layer also has a second portion positioned on the substrate laterally between the sidewall of the gate electrode and the first source/drain region. The first portion of the dielectric layer has a first thickness, and the second portion of the first dielectric layer has a second thickness that is less than the first thickness.

Abstract: Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. First and second source/drain regions are formed in a substrate, and a gate electrode is formed over the substrate. The gate electrode has a sidewall, and the gate electrode is laterally positioned between the first source/drain region and the second source/drain region. A buffer dielectric layer is formed that includes a first dielectric layer having a first portion positioned between the substrate and the gate electrode. The dielectric layer also has a second portion positioned on the substrate laterally between the sidewall of the gate electrode and the first source/drain region. The first portion of the dielectric layer has a first thickness, and the second portion of the first dielectric layer has a second thickness that is less than the first thickness.

Abstract: Low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations for modifying biomolecules is provided. Compositions, methods, and kits relating to low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations are also provided.

Abstract: Low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations for modifying biomolecules is provided. Compositions, methods, and kits relating to low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations are also provided.

Abstract: Methods of forming an EDNMOS with polysilicon fingers between a gate and a nitride spacer and the resulting devices are provided. Embodiments include forming a polysilicon layer upon a GOX layer over a substrate; forming a gate and plurality of fingers and a gate and plurality of fingers through the polysilicon layer down the GOX layer; forming an oxide layer over the GOX layer and sidewalls of the gates and fingers; forming a nitride layer over the oxide layer; removing portions of the nitride and oxide layers down to the polysilicon and GOX layers to form nitride spacers; and forming S/D regions laterally separated in the substrate, each S/D region adjacent to a nitride spacer.

Abstract: Low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations for modifying biomolecules is provided. Compositions, methods, and kits relating to low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations are also provided.

Abstract: Methods of using azide-modified biomolecules, such as fatty acids, carbohydrates and lipids, to treat a plant, an insect or an animal infected with a virus or to inhibit infectivity of a virus, such as the human immunodeficiency virus, are provided. Also provided are methods of labeling a virus, such as human immunodeficiency virus, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. Also, provided are methods of tracking a virus in vivo, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. The azide-modified biomolecules may be combined with a pharmaceutically acceptable excipient to produce a pharmaceutical composition, optionally containing another anti-viral agent and/or a delivery agent, such as a liposome.

Abstract: Methods of forming an EDNMOS with polysilicon fingers between a gate and a nitride spacer and the resulting devices are provided. Embodiments include forming a polysilicon layer upon a GOX layer over a substrate; forming a gate and plurality of fingers and a gate and plurality of fingers through the polysilicon layer down the GOX layer; forming an oxide layer over the GOX layer and sidewalls of the gates and fingers; forming a nitride layer over the oxide layer; removing portions of the nitride and oxide layers down to the polysilicon and GOX layers to form nitride spacers; and forming S/D regions laterally separated in the substrate, each S/D region adjacent to a nitride spacer.

Abstract: Methods of forming an EDNMOS with polysilicon fingers between a gate and a nitride spacer and the resulting devices are provided. Embodiments include forming a polysilicon layer upon a GOX layer over a substrate; forming a gate and plurality of fingers and a gate and plurality of fingers through the polysilicon layer down the GOX layer; forming an oxide layer over the GOX layer and sidewalls of the gates and fingers; forming a nitride layer over the oxide layer; removing portions of the nitride and oxide layers down to the polysilicon and GOX layers to form nitride spacers; and forming S/D regions laterally separated in the substrate, each S/D region adjacent to a nitride spacer.

Abstract: Methods of using azide-modified biomolecules, such as fatty acids, carbohydrates and lipids, to treat a plant, an insect or an animal infected with a virus or to inhibit infectivity of a virus, such as the human immunodeficiency virus, are provided. Also provided are methods of labeling a virus, such as human immunodeficiency virus, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. Also, provided are methods of tracking a virus in vivo, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. The azide-modified biomolecules may be combined with a pharmaceutically acceptable excipient to produce a pharmaceutical composition, optionally containing another anti-viral agent and/or a delivery agent, such as a liposome.

Abstract: Disclosed herein are compounds, compositions, methods and kits for detecting pH in samples using pH-sensitive fluorescent dyes. The compounds disclosed herein are novel xanthene-derivative dyes comprising an aniline moiety with one or more electron donating groups, which dyes are for detecting pH in samples either in vitro or in vivo. Also described herein are processes for preparing said dyes for use in the disclosed compositions, methods and kits.

Abstract: Low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations for modifying biomolecules is provided. Compositions, methods, and kits relating to low-copper click chemistry, 1.3-dipolar cycloadditions, and Staudinger ligations are also provided.

Abstract: Methods of forming an EDNMOS with polysilicon fingers between a gate and a nitride spacer and the resulting devices are provided. Embodiments include forming a polysilicon layer upon a GOX layer over a substrate; forming a gate and plurality of fingers and a gate and plurality of fingers through the polysilicon layer down the GOX layer; forming an oxide layer over the GOX layer and sidewalls of the gates and fingers; forming a nitride layer over the oxide layer; removing portions of the nitride and oxide layers down to the polysilicon and GOX layers to form nitride spacers; and forming S/D regions laterally separated in the substrate, each S/D region adjacent to a nitride spacer.

Abstract: Methods of using azide-modified biomolecules, such as fatty acids, carbohydrates and lipids, to treat a plant, an insect or an animal infected with a virus or to inhibit infectivity of a virus, such as the human immunodeficiency virus, are provided. Also provided are methods of labeling a virus, such as human immunodeficiency virus, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. Also, provided are methods of tracking a virus in vivo, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. The azide-modified biomolecules may be combined with a pharmaceutically acceptable excipient to produce a pharmaceutical composition, optionally containing another anti-viral agent and/or a delivery agent, such as a liposome.

Abstract: Disclosed herein are compounds, compositions, methods and kits for detecting pH in samples using pH-sensitive fluorescent dyes. The compounds disclosed herein are novel xanthene-derivative dyes comprising an aniline moiety with one or more electron donating groups, which dyes are for detecting pH in samples either in vitro or in vivo. Also described herein are processes for preparing said dyes for use in the disclosed compositions, methods and kits.

Abstract: Methods of using azide-modified biomolecules, such as fatty acids, carbohydrates and lipids, to treat a plant, an insect or an animal infected with a virus or to inhibit infectivity of a virus, such as the human immunodeficiency virus, are provided. Also provided are methods of labeling a virus, such as human immunodeficiency virus, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. Also, provided are methods of tracking a virus in vivo, with an azide-modified biomolecule, such as a fatty acid, a carbohydrate, or an isoprenoid lipid. The azide-modified biomolecules may be combined with a pharmaceutically acceptable excipient to produce a pharmaceutical composition, optionally containing another anti-viral agent and/or a delivery agent, such as a liposome.