Abstract: The present invention provides seeded rod (SR) nanostructure systems including an elongated structure embedded with a seed structure being a core/shell structure or a single-material rod element. The SR systems disclosed herein are suitable for use in a variety of electronic and optical devices.

Abstract: Compositions of matter comprising a seeded semiconductor nanoparticle material and a non-quantum confined phosphor particle material for use in light conversion and light conversion layers comprising such compositions. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are combined with a phosphor material to provide a composition of matter with small re-absorbance of the phosphor emission in both green and red wavelength regions and small re-absorbance of the SNP emission, In some embodiments, the SNPs or RSNPs are encapsulated in a first host material before being mixed with the phosphor particles. In various embodiments, a SNP/RSNP-phosphor mixture or encapsulated SNP/RSNP-phosphor mixture is incorporated in host matrix.

Abstract: Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are used to form conversion layers with superior combinations of high optical density (OD), low re-absorbance and small FRET. In some embodiments, the SNPs or RSNPs form conversion layers without a host matrix. In some embodiments, the SNPs or RSNPs are embedded in a host matrix such as polymers or silicone. The conversion layers can be made extremely thin, while exhibiting the superior combinations of optical properties.

Abstract: The present invention relates to a novel class of seeded nanoparticles and uses thereof.

Abstract: The present invention provides seeded rod (SR) nanostructure systems including an elongated structure embedded with a seed structure being a core/shell structure or a single-material rod element. The SR systems disclosed herein are suitable for use in a variety of electronic and optical devices.

Abstract: Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are used to form conversion layers with superior combinations of high optical density (OD), low re-absorbance and small FRET. In some embodiments, the SNPs or RSNPs form conversion layers without a host matrix. In some embodiments, the SNPs or RSNPs are embedded in a host matrix such as polymers or silicone. The conversion layers can be made extremely thin, while exhibiting the superior combinations of optical properties. Lighting devices including SNP or RSNP-based conversion layers exhibit energetically efficient superior prescribed color emission.

Abstract: The present invention relates inter alia to a color display comprising nanoparticles and color filters.

Abstract: An optically active structure and a display device are presented. The device utilized an optically active structure comprising liquid crystal material and a plurality of nanorods configured to emit light in one or more predetermined ranges in response to pumping light. Variation in orientation of the liquid crystal varies orientation of the nanorods and modulated light emission therefrom.

Abstract: The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.

Abstract: Provided are printed patterns and objects including, for example, a film or 3D object, which may include one or more nanorods. According to the subject matter provided, the nanorods may reduce or diminish inter-particle interaction in the pattern or object.

Abstract: The present invention provides an optically active structure and the use thereof in a backlight unit. The optically active structure comprises a plurality of optically active particles configured to emit light of one or more predetermined wavelength range in response to pumping energy, and a plurality of light scattering elements. The plurality of light scattering elements comprises optically transparent void regions, such as void regions surrounding filler particles.

Abstract: A polarized light source configured for use in display device and backlight unit is described. The polarized light source comprising: at least one optically active structure comprising a plurality of nanorods configured to emit light of one or more wavelengths in response to exciting pumping field, said plurality of nanorods comprising nanorods aligned with a predetermined alignment axis so as to produce a desired polarization direction of the emitted light; and a light directing assembly comprising one or more optical elements in optical path of light emitted from the light emitting structure, said light directing assembly being configured to enhance output of the emitted light from the emitting structure while substantially maintaining the polarization of the emitted light passing therethrough. Preferably, layers associated with the polarized light source are aligned with parallel principal axes.

Abstract: A light emitting device is presented. The device comprises an array of pixels and an electrode arrangement, wherein said array of pixels comprises pixels of first and second groups comprising first and second pluralities of light emitting nanorods aligned along first and second predetermined axes respectively, the axes being substantially perpendicular to each other, and the pixels of said array are associated with a plurality of electrode elements of said electrode arrangement thereby enabling modulation of optical emission of one or more pixels separately from one or more other pixels of said pixel array by controllable application of an electric field, the device being therefore configured and operable as an active pixel emitter.

Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

Abstract: An optically active structure (100) is provided, comprising at least two different groups (G1, G2) of optically active nanorods (104A, 104B). The groups of nanorods differ from one another in at least one of wavelength and polarization of light emitted thereby in response to pumping light. The nanorods of the same group are homogeneously aligned with a certain axis of alignment being substantially parallel or substantially perpendicular to an axis of alignment of the nanorods of at least one other group, such that the nanorods of said at least two groups have one or two axes of alignment. The optically active structure is used as color polarized light source for displays.

Abstract: Compositions of matter comprising a seeded semiconductor nanoparticle material and a non-quantum confined phosphor particle material for use in light conversion and light conversion layers comprising such compositions. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are combined with a phosphor material to provide a composition of matter with small re-absorbance of the phosphor emission in both green and red wavelength regions and small re-absorbance of the SNP emission, In some embodiments, the SNPs or RSNPs are encapsulated in a first host material before being mixed with the phosphor particles. In various embodiments, a SNP/RSNP-phosphor mixture or encapsulated SNP/RSNP-phosphor mixture is incorporated in host matrix.

Abstract: The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.

Abstract: This invention generally relates to metal chalcogenide nanostructures, methods for their preparation and methods of use. A method is disclosed that transforms zinc chalcogenide nanowires into nanorods or quadrilateral nanostructures in an anneal step. Particular embodiments comprise ZnO nanostructures.

Abstract: Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are used to form conversion layers with superior combinations of high optical density (OD), low re-absorbance and small FRET. In some embodiments, the SNPs or RSNPs form conversion layers without a host matrix. In some embodiments, the SNPs or RSNPs are embedded in a host matrix such as polymers or silicone. The conversion layers can be made extremely thin, while exhibiting the superior combinations of optical properties.

Abstract: A light emitting device is presented. The device comprises an array of pixels and an electrode arrangement, wherein said array of pixels comprises pixels of first and second groups comprising first and second pluralities of light emitting nanorods aligned along first and second predetermined axes respectively, the axes being substantially perpendicular to each other, and the pixels of said array are associated with a plurality of electrode elements of said electrode arrangement thereby enabling modulation of optical emission of one or more pixels separately from one or more other pixels of said pixel array by controllable application of an electric field, the device being therefore configured and operable as an active pixel emitter.