Patents by Inventor Uryon S. Davidsohn

Uryon S. Davidsohn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices
    Patent number: 4042949
    Abstract: Various devices are described herein utilizing anisotropic etching and dielectric isolations as means for limiting areas of either conductivity type semiconductor material. Surface junctions normally found in the diffused semiconductor devices of the prior art are also eliminated by the use of overlap diffusion techniques. Anisotropic etching is employed in certain of the devices for attaining buried PN junctions.
    Type: Grant
    Filed: July 14, 1975
    Date of Patent: August 16, 1977
    Assignee: Motorola, Inc.
    Inventor: Uryon S. Davidsohn
  • Diffusion guarded metal-oxide-silicon field effect transistors
    Patent number: 3967988
    Abstract: Metal-oxide-silicon field effect transistors (MOSFET) are shown utilizing diffusion guarding of the gate electrode of a MOSFET device and utilizing the drain of one MOSFET device as the source of the next integrally formed MOSFET device. Other types of isolation shown include the surrounding of a functional unit with a source diffusion area, and/or permanently connecting a gate electrode to a potential level for preventing signal flow past such a gate.
    Type: Grant
    Filed: March 14, 1975
    Date of Patent: July 6, 1976
    Assignee: Motorola, Inc.
    Inventor: Uryon S. Davidsohn