Abstract: Disclosed is a wafer-scale chip structure including a semiconductor wafer and multiple dies on the semiconductor wafer. The dies can include at least two dies with different patterns of fill shapes. Also disclosed are wafer-scale chip design methods and systems. In the design methods and systems, post-chip layout wafer-level topography optimization is performed to, for example, minimize performance variations between dies of the same design within the wafer-scale chip. Specifically, across-wafer die placement and wafer-level topography information is used to custom design and/or select different patterns of fill shapes to be inserted into the layouts of dies placed at different locations across the wafer-scale chip (including different patterns to be inserted into the layouts of dies that have the same design) in order to generate a design that minimizes either all across-wafer thickness variations or at least across-wafer thickness variations associated with specific dies having the same specific design.

Abstract: Apparatus and methods of chemical-mechanical polishing of a layer on a wafer. A plurality of polishers arranged on a rotating plate, and a carrier is configured to hold the wafer and to place the layer in contact with the polishers. Each polisher includes a platen and a force-applying device operatively connected to the platen, and the force-applying device is configured to apply a variable force to the platen in order to change a rate of material removal over an area of the layer on the wafer contacted by a polishing pad carried by the platen.

Abstract: Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.

Abstract: A design or lithographic enhancement process, a method for forming a device based on the lithographic enhancement process and a system for pattern enhancement are presented. The process includes processing a design data file. The design data file includes information of design layers in an integrated circuit (IC). Processing the design data file includes analyzing the design data file and patterns in the design data file are enhanced taken into consideration topography information of design layers corresponding to masks of the IC.

Abstract: A design or lithographic enhancement process, a method for forming a device based on the lithographic enhancement process and a system for pattern enhancement are presented. The process includes processing a design data file. The design data file includes information of design layers in an integrated circuit (IC). Processing the design data file includes analyzing the design data file and patterns in the design data file are enhanced taken into consideration topography information of design layers corresponding to masks of the IC.

Abstract: Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.

Abstract: A method for selecting and placing of an IP block in a SOC design based on a topology and/or a density of the SOC design is disclosed. Embodiments include: displaying a user interface; causing, at least in part, a presentation in the user interface of a topology and density view of a SOC design that includes an IP block; and modifying, prior to a tape-out of the SOC design, topology and/or density transition for the IP block in the SOC design based on the presentation.

Abstract: A method for selecting and placing of an IP block in a SOC design based on a topology and/or a density of the SOC design is disclosed. Embodiments include: displaying a user interface; causing, at least in part, a presentation in the user interface of a topology and density view of a SOC design that includes an IP block; and modifying, prior to a tape-out of the SOC design, topology and/or density transition for the IP block in the SOC design based on the presentation.