Abstract: A power semiconductor device includes: a first load terminal at a first side, a second load terminal, and a semiconductor body coupled to the load terminals and configured to conduct a load current between the load terminals; and trenches at the first side and extending into the semiconductor body along a vertical direction. Each trench includes a trench electrode insulated from the semiconductor body by a trench insulator. Two trenches spatially confine a mesa portion. A semiconductor source region and semiconductor body region are in the mesa portion. A contact plug extends from the first side into the mesa portion and is arranged: in contact with the source and body regions; in contact with the trench insulator of one of the two trenches that spatially confine the mesa portion; and spaced apart from the trench insulator of the other one of the two trenches that spatially confine the mesa portion.