Abstract: A method for performing a high-temperature burn-in test on integrated circuits is disclosed. A thin-film is placed on top of an integrated circuit having multiple transistors. An infra-red filter is then placed on top of the thin-film. All the transistors of the integrated circuit are radiated by an infra-red source through the thin-film and the infra-red filter when a high-temperature burn-in test is being performed.

Abstract: A thermoelectric cooling apparatus which includes a Peltier device or a thermoelectric element coupled to a hot source and a cold sink. The hot source dissipates heat produced by the thermoelectric element. The cold sink is coupled to a mass to be cooled. A means for supplying power to the thermoelectric element is provided and a means for selectively thermally coupling the thermoelectric element to the hot source is provided. Selectively thermally switching the thermoelectric element to the hot source allows heat to be dissipated to the hot source when the thermoelectric element possesses excess heat. Dissipating the excess heat when the excess heat is present allows higher efficiencies to be attained in thermoelectric cooling.

Abstract: A digitally adjustable inductive element which can be implemented in an integrated circuit. The digitally adjustable inductive element can include a first inductor, and a digital inductance controller operatively coupled to the first inductor which can be utilized to vary the effective inductance of the first inductor. The digitally adjustable inductive element can include a second inductor operatively coupled to the first inductor, and a digital current controller operatively coupled to the second inductor. The digital current controller can include a number of transistors operatively coupled to the second inductor. The digitally adjustable inductive element can be utilized to create a tunable oscillator.

Abstract: A thermoelectric cooling (TEC) device is thermally coupled, in close proximity, to a GMR head chip. When power is applied to the TEC device, heat is extracted from the GMR head chip by heat transfer to the cold end of the TEC device and rejected by heat pipes or cooling fins along the slider arm, in one embodiment. In another embodiment, a TEC device is integrated with the GMR head chip such that the cold end of the TEC device is physically and thermally coupled with the GMR head chip. Heat is transferred from the GMR head chip to a thermal spreader pad on the `hot` end of the integrated GMR/TEC device.

Abstract: A domino logic circuit having a clocked precharge is disclosed. The domino logic circuit includes a precharge transistor, a discharger transistor, several input transistors, and an invertor. Connected to a power supply, the precharge transistor receives a first clock input. The discharge transistor, connected to the ground, receives a second clock input. The input transistors is coupled between the precharge transistor and the discharge transistor. Each of the input transistors receives a signal input. The inverter has an input coupled to the precharge transistor, and an output to yield a signal output. The inverter includes a first transistor and a second transistor connected in series, and the output of the inverter is connected to a body of the first transistor.

Abstract: A highly efficient current controlled thermoelectric cooling system is disclosed. The highly efficient current controlled thermoelectric cooling system includes a first thermal sink, a second thermal sink, a thermoelectric element, and a variable current source. The first thermal sink has a temperature higher than an ambient temperature while the second thermal sink has a temperature lower than the ambient temperature. The first thermal sink is continuously coupled to the thermoelectric element while the second thermal sink is selectively coupled to the thermoelectric element via a mass. A variable current source provides a controlled current pulse to the thermoelectric element such that heat transfer can be effectively achieved between the thermoelectric element and both thermal sinks.

Abstract: A solid state thermal switch providing thermal conductivity in an ON state and enhanced thermal isolation in an OFF state. The thermal switch is manufactured on a substrate by forming an oxide layer under a thin semiconducting layer. The thin semiconducting layer can be made from silicon or a silicon germanium lattice structure. The thin silicon layer is cracked by a neutron bombardment process. A drain and a source are then etched into the thin silicon layer. Cracks in the thin silicon layer disrupt quiescent thermal conductivity in the electron transport layer between the gate and source when the solid state thermal switch is in the OFF state. The thin semiconducting layer transports electrons and heat when the solid state thermal switch is in the ON state. The cracks created in the silicon layer provide thermal isolation from the drain to the source when the thermal switch is in an OFF state and allow heat conduction when the solid state thermal device is in the ON state.

Abstract: A system for synchronizing circuit operation within an integrated circuit having a high frequency clock. The system includes an oscillator for providing a clock signal and a transmission line coupled to the oscillator for distributing the clock signal to load buffers. The load buffers provide sub-circuits within the integrated circuit with synchronized clock signals. The load buffers are resonant and convert the capacitive load impedance of receiving circuits into a virtual inductive load. The impedance converter boosts the clock signal transition times to provide improved high frequency circuit synchronization within the integrated circuit.

Abstract: A system for efficiently transferring heat from a cold sink to a hot source utilizing thermoelectric cooling effects is disclosed. A plurality of thermoelectric elements are coupled in a series configuration with a power source. The plurality of thermoelectric elements are coupled in a parallel configuration with the cold sink and the hot source. The surface area of the hot source is greater than the surface area of the cold sink such that the plurality of thermoelectric elements can effectively transfer heat from the cold sink to the hot source in response to the power source. The plurality of thermoelectric can be fabricated on an integrated circuit with analog or digital circuity and effectively cool hot spots.

Abstract: Apparatus and method for sub-ambient cooling using thermoelectric element dynamics in conjunction with pulsed electrical power and selectively enabled thermal coupling to the cold sink. In one form, Peltier devices are dynamically enabled using pulses of electrical power while the thermal path between the cold side of the Peltier device and the cold sink is selectively switched in relative synchronism between conductive states responsive to the dynamics of the Peltier device temperatures. Switched coupling of the thermal connection between the cold sink and the Peltier device materially improves efficiency by decoupling Joule heating and conductive heat transfer losses otherwise conveyed from the Peltier device. Preferable implementations utilizes MEMS to accomplish the selective thermal switching, whereby sub-ambient cooling capacity is increased by parallel operation of multiple Peltier devices and MEMS switches.

Abstract: An integrated circuit having at least the following: a substrate; a composite inductor formed within the substrate having at least a first coil with an associated first coil inductance and first coil resistance and a second coil with an associated second coil inductance and second coil resistance, with the first coil formed proximate the second coil for magnetic flux linkage such that when a current in the first coil is matched with a current in the second coil, a new inductance associated with the first coil is produced that is in excess of the first coil inductance. An oscillator can be formed in the integrated circuit by connecting the first coil to at least one capacitor formed in the substrate.

Abstract: An integrated circuit having electrostatic discharge protection. The integrated circuit is built from a semiconducting substrate. A circuit is formed within the semiconductor substrate. The circuit has an input and a ground. A voltage activated microelectromechanical switch is fabricated within the semiconducting substrate utilizing integrated circuit techniques. The microelectromechanical switch is coupled across the circuit input and the circuit ground. The voltage activated microelectromechanical switch couples the circuit input to the circuit ground when an electrostatic discharge voltage of sufficient magnitude is applied to the input of the circuit such that the electrostatic discharge is dissipated to ground through the microelectromechanical switch thereby protecting the circuit from ESD.

Abstract: Apparatus and method for sub-ambient cooling using thermoelectric element dynamics in conjunction with pulsed electrical power and multiple selectively enabled thermal switches. In one form, Peltier devices are dynamically enabled using pulses of electrical power while the thermal paths, between the cold and hot sides of the device are selectively switched conduction state responsive to the temperature dynamics within the Peltier device. Switched coupling of the thermal connections in relative synchronism to the Peltier device electrical and thermal dynamics materially improves efficiency by decoupling Joule heating and conductive heat transfer losses otherwise affecting the net heat transfer. Preferable implementations utilizes MEMS to accomplish the selective switching, whereby sub-ambient cooling capacity is increased by parallel operation of multiple Peltier devices and MEMS switches.