Abstract: A reflective diffraction grating includes a substrate and a reflection-enhancing interference layer system. The reflection-enhancing interference layer system has alternating low refractive index dielectric layers having a refractive index n1 and high refractive index dielectric layers having a refractive index n2>n1. The reflective diffraction grating also includes a grating containing a grating structure, which is formed in the topmost low refractive index layer on a side of the interference layer system facing away from the substrate, and a cover layer, which conformally covers the grating structure. The cover layer has a refractive index n3>n1.

Abstract: A diffraction grating includes a grating area having, in a direction running parallel to a substrate, a periodic arrangement of first areas with a first grating material and second areas with a second grating material. The first grating material and the second grating material are solid materials with different indices of refraction. A reflection-reducing or reflection-increasing layer system having at least two layers with different indices refraction. The reflection-reducing or reflection-increasing layer system is arranged on one side of the grating area facing away from the substrate, and an additional layer system having at least two layers with different indices of refraction is arranged between the substrate and the grating area. A method for producing the diffraction grating is also specified.

Abstract: An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

Abstract: An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

Abstract: An ultrasonic probe for optical detection of ultrasonic waves includes a membrane integrated into the probe for contact with a body, the membrane being excited to vibration by reflected ultrasonic waves, leading to a change in optical path length of a beam of light directed at the membrane, which change is determined interferometrically.

Abstract: An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

Abstract: An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

Abstract: An ultrasonic probe for optical detection of ultrasonic waves includes a membrane integrated into the probe for contact with a body, the membrane being excited to vibration by reflected ultrasonic waves, leading to a change in optical path length of a beam of light directed at the membrane, which change is determined interferometrically.