Patents by Inventor Uwe Doebler

Uwe Doebler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5780929
    Abstract: Deep submicran mosfets with defect enhanced CoSi2 formation and improved silicided junctions. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
    Type: Grant
    Filed: November 5, 1996
    Date of Patent: July 14, 1998
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinrich Zeininger, Christoph Zeller, Udo Schwalke, Uwe Doebler, Wilfried Haensch
  • Patent number: 5344793
    Abstract: An method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
    Type: Grant
    Filed: March 5, 1993
    Date of Patent: September 6, 1994
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinrich Zeininger, Christoph Zeller, Udo Schwalke, Uwe Doebler, Wilfried Haensch