Abstract: A computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: a) receive scan data of a sample to be analyzed for phase shift interferometry (PSI); b) for each pixel of the plurality of pixels, i) generate a sequence of interferences for a corresponding pixel of the plurality of pixels; ii) generate a wave form from the sequence of interferences for the corresponding pixel; iii) generate an approximated waveform based on the wave form and a non-normal distributed statistical distribution; iv) extract a phase from the approximated waveform; and c) generate a phase image from the plurality of phases from each pixel of the plurality of pixels.

Abstract: A computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: a) receive a plurality of images for a continuous scan phase shift interferometry (PSI), wherein the plurality of images includes a first plurality of pixels of a front surface of a sample and a second plurality of pixels of a back surface of a sample; b) simultaneously perform a first plurality of intensity scans of each pixel in the first plurality of pixels and a second plurality of intensity scans of each pixel in the second plurality of pixels; c) identify zero transitions for each of the first plurality of pixels; d) identify zero transitions for each of the second plurality of pixels; and e) compare the plurality of zero transitions to determine a relative movement and deformation of the sample during the PSI scan.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: It is the goal of the invention to provide an improved method and an improved apparatus to measure the diffusion length of minority charge carriers in semiconductors. In particular, the method should be easy to implement. The method should yield higher measurement accuracy. The data analysis should be easy. The apparatus should be easy to use. This goal is achieved using the following procedure steps: Application of periodically alternating light of different wavelengths (?1, ?2) to the semiconductor sample (28); Detection of the surface potential modulation caused by the application of the light, Adjustment of at least one of the light intensities (I1) in such a manner that the surface potential modulation disappears; and Determination of the diffusion length (L) of the minority charge carriers from the adjusted light intensities.

Abstract: It is the goal of the invention to provide an improved method and an improved apparatus to measure the diffusion length of minority charge carriers in semiconductors. In particular, the method should be easy to implement. The method should yield higher measurement accuracy. The data analysis should be easy. The apparatus should be easy to use. This goal is achieved using the following procedure steps: Application of periodically alternating light of different wavelengths (?1, ?2) to the semiconductor sample (28); Detection of the surface potential modulation caused by the application of the light, Adjustment of at least one of the light intensities (I1) in such a manner that the surface potential modulation disappears; and Determination of the diffusion length (L) of the minority charge carriers from the adjusted light intensities.