Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: Systems and methods disclosed are generally related to masklessly developing connections between a chip-group and a design connection point on a substrate. In placement of the chip-group on the substrate, according to certain embodiments the chip-group may be dispositioned relative to an expected position per a substrate layout design, causing a connection misalignment with the design connection point. According to certain embodiments, a machine learning (ML) model is trained on historical and simulated pixel models of chip-group connections and design connection points. Upon determining the chip-group misalignment by a metrology measurement, the trained ML model determines a pixel model to connect the misaligned chip-group, and causes the pixel model to be exposed to a substrate with a digital lithography tool, thereby connecting the dispositioned chip-group to the design connection point.

Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: Systems and methods disclosed are generally related to masklessly developing connections between a chip-group and a design connection point on a substrate. In placement of the chip-group on the substrate, according to certain embodiments the chip-group may be dispositioned relative to an expected position per a substrate layout design, causing a connection misalignment with the design connection point. According to certain embodiments, a machine learning (ML) model is trained on historical and simulated pixel models of chip-group connections and design connection points. Upon determining the chip-group misalignment by a metrology measurement, the trained ML model determines a pixel model to connect the misaligned chip-group, and causes the pixel model to be exposed to a substrate with a digital lithography tool, thereby connecting the dispositioned chip-group to the design connection point.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: A real time software and array control software application platform which maintains the ability to manage the synchronization between substrate alignments and image projection systems during maskless lithography patterning in a manufacturing process is disclosed. The application coordinates and controls the image projection systems such that discrepancies in and misalignments of the substrate may be determined and accounted for in real time. The image projection systems may run in parallel and may be controlled by a central processor.

Abstract: A real time software and array control software application platform which maintains the ability to manage the synchronization between substrate alignments and image projection systems during maskless lithography patterning in a manufacturing process is disclosed. The application coordinates and controls the image projection systems such that discrepancies in and misalignments of the substrate may be determined and accounted for in real time. The image projection systems may run in parallel and may be controlled by a central processor.

Abstract: A real time software and array control software application platform which maintains the ability to manage the synchronization between substrate alignments and image projection systems during maskless lithography patterning in a manufacturing process is disclosed. The application coordinates and controls the image projection systems such that discrepancies in and misalignments of the substrate may be determined and accounted for in real time. The image projection systems may run in parallel and may be controlled by a central processor.

Abstract: Aspects of the invention relate to techniques of optical simulation for topographically non-uniform substrates. A layout design is simulated to generate an aerial image based on optical models for different types of substrates and for transition regions, along with models for one or more categories of light signals. The one or more categories of light signals comprise trench side-wall reflection signals, trench radiation signals, and trench corner diffraction signals. The one or more categories of light signals may further comprise gate scattering signals and interconnect scattering signals. The models for the one or more categories of light signals may be calibrated with experimental data.

Abstract: Aspects of the invention relate to techniques of optical simulation for topographically non-uniform substrates. A layout design is simulated to generate an aerial image based on optical models for different types of substrates and for transition regions, along with models for one or more categories of light signals. The one or more categories of light signals comprise trench side-wall reflection signals, trench radiation signals, and trench corner diffraction signals. The one or more categories of light signals may further comprise gate scattering signals and interconnect scattering signals. The models for the one or more categories of light signals may be calibrated with experimental data.

Abstract: A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.

Abstract: A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system.

Abstract: Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.

Abstract: Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.