Abstract: The present invention relates to a sputtering target consisting of an alloy consisting of Co, Zr, Ta and, optionally, one or more further element(s) X from the group of Mo, Pd, Ni, Ti, V, W, and B, characterized in that the target has a maximum magnetic permeability ?max of 60 or lower and/or characterized in that the target has a maximum pass through flux (PTF) variation (FMax?FMin)/FAverage of 0.2 or lower, preferably of 0.15 or lower, and most preferably of 0.10 or lower.

Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.

Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.

Abstract: The present invention relates to a sputtering target comprising a silver alloy that contains 5-25% by weight of palladium, based on the total amount of silver alloy, and has a mean grain size in the range of 25-90 ?m.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: A sputtering target and a process for producing a sputtering target from a silicon-based alloy with an aluminum content of more than 6 wt. % up to 50 wt. %. Preferably, the aluminum content of the alloy is at least 8 wt. %, but no more than 30 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

Abstract: A process for producing a sputtering target from a silicon-based alloy with an aluminum content of 5-50 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

Abstract: A process for producing a sputtering target from a silicon-based alloy with an aluminum content of 5-50 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

Abstract: The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si3N4 or SiO2 in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.

Abstract: The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si3N4 or SiO2 in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.

Abstract: The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si3N4 or SiO2 in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.

Abstract: A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.

Abstract: Oxide-ceramic targets of partially reduced indium oxide-tin oxide mixtures are described. The targets provide high sputter performances, and they exhibit an essentially defined degree of reduction between 0.02 and 0.3, a density between 75 and 98% of the theoretical density and a specific electric resistance between 89.times.10.sup.-3 and 0.25.times.10.sup.-3 .OMEGA. cm. The degree of reduction must not deviate at any point on the target surface by more than 5% from the average degree of reduction of the target. The targets are produced by means of hot-pressing the oxide mixtures which were partially reduced beforehand in a special method step.

Abstract: The invention concerns a process for coating a substrate 1 of little or no corrosion resistance, especially a metal substrate having an alloy consisting at least of Ni, Cr and Fe, in an evacuable coating chamber 15, 15a. It comprises making an electrode that can be connected to a current supply 10, this electrode being electrically connected to a target 3 which is sputtered and the sputtered particles of which are deposited on the substrate 1. Reactive process gases are, for this purpose, supplied to the coating chamber 15, 15a, so that an amorphously depositing layer 2 is applied onto the substrate.