Abstract: The present invention refers to a process for the preparation of a bis(acyl)phosphinic acid silyl ester of the general formula (I), wherein R1, R2, R3, R4, R5, R7, R8, R9, R10 and R11 are the same or different and are independently selected from H, halogen, linear or branched C1-C20-alkyl, linear or branched C2-C8-alkenyl, C1-C8-alkoxy, C2-C8-alkenyloxy, C3-C8-cycloalkyl, C6-C12-aryl, C3-C8-cycloalkoxy, C7-C12-arylalkoxy, C9-C15-alkenylarylalkoxy, nitro-, C6-C12-arylsulfonyl, 4-alkylarylsulfonyl, C1-C20-alkylcarboxy, C1-C8-alkoxycarbonyl, SR12, NHR12 or NR12R13 with R12 and R13 being independently selected from H, linear or branched C1-C20-alkyl, linear or branched C2-C8-alkenyl and C3-C8-cycloalkyl, and an O-, S- or N-containing 5- or 6-membered heterocyclic ring; R6 is OSiR14R15R16 with R14, R15 and R16 being independently selected from linear or branched C1-C20-alkyl or C6-C12-aryl; as well as the bis(acyl)phosphinic acid silyl ester and the bis(acyl)phosphinic acid obtained by the process.

Abstract: The present invention refers to a process for the preparation of a bis(acyl)phosphinic acid silyl ester of the general formula (I), wherein R1, R2, R3, R4, R5, R7, R8, R9, R10 and R11 are the same or different and are independently selected from H, halogen, linear or branched C1-C20-alkyl, linear or branched C2-C8-alkenyl, C1-C8-alkoxy, C2-C8-alkenyloxy, C3-C8-cycloalkyl, C6-C12-aryl, C3-C8-cycloalkoxy, C7-C12-arylalkoxy, C9-C15-alkenylarylalkoxy, nitro-, C6-C12-arylsulfonyl, 4-alkylarylsulfonyl, C1-C20-alkylcarboxy, C1-C8-alkoxycarbonyl, SR12, NHR12 or NR12R13 with R12 and R13 being independently selected from H, linear or branched C1-C20-alkyl, linear or branched C2-C8-alkenyl and C3-C8-cycloalkyl, and an O-, S- or N-containing 5- or 6-membered heterocyclic ring; R6 is OSiR14R15R16 with R14, R15 and R16 being independently selected from linear or branched C1-C20-alkyl or C6-C12-aryl; as well as the bis(acyl)phosphinic acid silyl ester and the bis(acyl)phosphinic acid obtained by the process.

Abstract: A heat sink is arranged on a main circuit board of an electronic module. The heat sink includes a three-dimensionally structured thermally conductive plate with a press-on region and with snap-action hooks. The snap-action hooks are arranged approximately at right angles with respect to the press-on region and are resiliently connected to the press-on region. The snap-action hooks are latched into place, with pressure generation of the press-on region onto a rear side of a surface-mountable semiconductor device, into corresponding passage openings of the circuit board. A plastically deformable thermal composition is disposed between the rear side of the semiconductor device and the press-on region of the heat sink so as to form an intermediate layer therebetween to provide compensation for the thickness tolerances of the semiconductor device.

Abstract: A heat sink is arranged on a main circuit board of an electronic module. The heat sink includes a three-dimensionally structured thermally conductive plate with a press-on region and with snap-action hooks. The snap-action hooks are arranged approximately at right angles with respect to the press-on region and are resiliently connected to the press-on region. The snap-action hooks are latched into place, with pressure generation of the press-on region onto a rear side of a surface-mountable semiconductor device, into corresponding passage openings of the circuit board. A plastically deformable thermal composition is disposed between the rear side of the semiconductor device and the press-on region of the heat sink so as to form an intermediate layer therebetween to provide compensation for the thickness tolerances of the semiconductor device.

Abstract: A heat sink for electronic components is presented, which is integral and comprises a strip of sheet brass. This strip is bent in a meandering shape, contact surfaces being seated on a heat distributor of a component, in the region of lower meandering curves. The heat sink is held firmly on the component by means of an internally produced prestress in conjunction with a snap-action connection. Although the heat sink has longitudinal elasticity even in the fitted state, its heat-dissipating function can always be maintained.