Abstract: The invention relates to a plasma-treatment device, in which a plasma electrode unit can be inserted into and removed from a processing chamber, and in which high-frequency power generated by a generator is transmitted to the plasma electrode unit by means of one or more electromagnetic fields and without an electrical ohmic contact. For this purpose, the plasma-treatment device comprises a transmission apparatus, which contains a primary coupling part, which is arranged inside the processing chamber and can generate an electromagnetic field. The plasma electrode unit contains a secondary coupling part, which is rigidly connected to the plasma electrode unit and is suitable for receiving the electromagnetic field and converting it into alternating electrical power. Furthermore, a method for operating such a plasma-treatment device is provided.

Abstract: In an ion implantation device and a method for the ion implantation of a substrate, plasma having an ion density of at least 1010 cm?3, is generated by a plasma source in a discharge space. The discharge space is delimited in the direction of the substrate to be implanted by a plasma-delimiting wall. The plasma-delimiting wall being at a plasma potential, and a pressure in the discharge space is higher than the pressure in the space in which the substrate is situated in the ion implantation device. The substrate bears on a substrate support, with its substrate surface opposite the plasma-delimiting wall. The substrate and/or the substrate support are/is utilized as a substrate electrode, which is put at a high negative potential relative to the plasma that ions are accelerated from the plasma in the direction of the substrate and implanted into the substrate.