Abstract: A method for reducing the contamination of at least one optical component (2, 3) contained in the beam guidance space (6) and held by a frame (4, 5) defining the beam guidance space and a corresponding optical beam guidance system. The surfaces of the frame bordering on the beam guidance space are at least partially coated with a degassing barrier layer (7) that preferably does not increase reflectivity. The method and system have use, for example, in lithography irradiation systems working with UV light.

Abstract: EUV lithography devices do indeed have a vacuum or an inert gas atmosphere in their interior, yet the appearance of hydrocarbons and/or other carbon compounds within the device cannot be fully prevented. These carbon compounds lead to the contamination of the optical elements and a resulting loss in reflectivity. In order to counteract this, it has been suggested that while operating the EUV lithography device, the degree of contamination should be constantly monitored, e.g. using quartz crystal microwaves. Depending on the degree of contamination, oxygen is supplied to the interior of the lithography device. The oxygen, in combination with exposure radiation breaks down the contamination while the lithography device is running. The EUV lithography device is thereby equipped with at least one measuring device (3) and a connected control unit (4), which is connected to the oxygen supply (5a).

Abstract: A process for the structuring of a substrate with structures in the micrometer to nanometer range that does not involve the provision of gaseous fluoro-organic compounds is described. The process is carried out by means of reactive ion etching using a mask arranged on the substrate and a plasma as well as fluorine-containing organic compounds, which fluorine-containing organic compound(s) is/are provided in the form of solid polymers. A process for the etching of a coating on a substrate or the surface of a substrate is also described.

Abstract: A process for the structuring of a substrate with structures in the micrometer to nanometer range that does not involve the provision of gaseous fluoro-organic compounds is described. The process is carried out by means of reactive ion etching using a mask arranged on the substrate and a plasma as well as fluorine-containing organic compounds, which fluorine-containing organic compound(s) is/are provided in the form of solid polymers. A process for the etching of a coating on a substrate or the surface of a substrate is also described.

Abstract: A method for reducing the contamination of at least one optical component (2, 3) contained in the beam guidance space (6) and held by a frame (4, 5) defining the beam guidance space and a corresponding optical beam guidance system. The surfaces of the frame bordering on the beam guidance space are at least partially coated with a degassing barrier layer (7) that preferably does not increase reflectivity. The method and system have use, for example, in lithography irradiation systems working with UV light.

Abstract: EUV lithography devices do indeed have a vacuum or an inert gas atmosphere in their interior, yet the appearance of hydrocarbons and/or other carbon compounds within the device cannot be fully prevented. These carbon compounds lead to the contamination of the optical elements and a resulting loss in reflectivity. In order to counteract this, it has been suggested that while operating the EUV lithography device, the degree of contamination should be constantly monitored, e.g. using quartz crystal microwaves. Depending on the degree of contamination, oxygen is supplied to the interior of the lithography device. The oxygen, in combination with exposure radiation breaks down the contamination while the lithography device is running. The EUV lithography device is thereby equipped with at least one measuring device (3) and a connected control unit (4), which is connected to the oxygen supply (5a).