Abstract: A customizable integrated circuit including a substrate, a plurality of logic units formed on the substrate and a plurality of metal routing layers formed on the substrate for interconnecting the plurality of logic units. The plurality of metal routing layers includes a first routing layer including a plurality of elongate conductors extending generally in a given direction, a second routing layer including a plurality of transversely extending conductors, each adapted for interconnecting a termination of one of the plurality of elongate conductors to a beginning of another one of the plurality of elongate conductors and at least a third routing layer, including a plurality of local routing conductors, a plurality of customizable connections between pairs of the plurality of elongate conductors via individual ones of the plurality of transversely extending conductors and customizable connections between individual elongate conductors and a plurality of individual local routing conductors.

Abstract: A customizable integrated circuit including a substrate, a plurality of logic units formed on the substrate and a plurality of metal routing layers formed on the substrate for interconnecting the plurality of logic units.

Abstract: A customizable integrated circuit including a plurality of electrically conducting routing layers formed on a substrate for interconnecting a plurality of logic units formed on the substrate, including a first routing layer including a plurality of elongate conductors extending generally in a given direction, a second routing layer including a plurality of transversely extending conductors, each adapted for interconnecting a termination of one of the plurality of elongate conductors to a beginning of another one of the plurality of elongate conductors; and at least a third routing layer including a plurality of local routing conductors, a plurality of customizable connections, preferably arranged generally in at least one row, between pairs of the plurality of elongate conductors via individual ones of the plurality of transversely extending conductors and, preferably, customizable connections between individual ones of the plurality of elongate conductors and a plurality of individual ones of the local routi

Abstract: This invention discloses a cell forming part of a customizable logic array device, the cell including at least first and second multiplexers, each having a select input and an output, at least two inverters, each having an input and an output, and electrical connections, selectably connecting the output of the first multiplexer to either the select input of the second multiplexer or to the input of one of the at least two inverters. A customizable logic array device including a plurality of cells, each cell including at least first and second multiplexers is also disclosed.

Abstract: This invention discloses an integrated circuit device including transistors having predetermined upper voltage limits, a multi-layer metal interconnect structure connecting the transistors to each other and to an external voltage source having a voltage in excess of the predetermined upper voltage limits of a first plurality of the transistors, and a voltage reducer connected along the interconnect structure between the external voltage source and the first plurality of the transistors.

Abstract: A customizable gate array device including a customizable gate array portion and a customizable memory portion.

Abstract: A customizable logic array device including an array of identical multiple input, function selectable logic cells comprising a first conductive layer, application configurable interconnection apparatus selectably interconnecting the multiple input, function selectable logic cells, the application configurable interconnection apparatus comprising at least two conductive layers.

Abstract: This invention discloses a gate array device, useful either as a configurable gate array device or a compact gate array device, comprising an array of two-gate logic cells arranged in columns, a metal grid interconnecting said logic cells into clusters of macrocells, said grid comprising a bottom metal layer and at least one metal layer disposed over the bottom metal layer, power and ground lines formed of said bottom metal layer, extending generally parallel to said columns and a routing grid interconnecting said clusters of macrocells, said routing grid comprising parallel metal tracks crossing said columns of logic cells, and wherein no more than two of said parallel metal tracks are employed to connect to each logic cell.

Abstract: A very high speed customizable logic array device comprising:a substrate having at least one gate layer and at least first, second and third metal layers formed thereon, the gate layer including a multiplicity of identical unit logic cells,the customizable logic array device including at least three of the following functionalities:NAND, NOR, inverter, AND and ORand further being characterized in that the ratio between the rise time and the fall time of the logic cells embodying each of the at least three functionalities is constant.

Abstract: A cell forming part of a customizable logic array and including at least first and second different multiplexers, an output of the first multiplexer being connected to an input of the second multiplexer.

Abstract: This invention discloses a gate array device, useful either as a configurable gate array device or a compact gate array device, comprising an array of two-gate logic cells arranged in columns, a metal grid interconnecting said logic cells into clusters of macrocells, said grid comprising a bottom metal layer and at least one metal layer disposed over the bottom metal layer, power and ground lines formed of said bottom metal layer, extending generally parallel to said columns and a routing grid interconnecting said clusters of macrocells, said routing grid comprising parallel metal tracks crossing said columns of logic cells, and wherein no more than two of said parallel metal tracks are employed to connect to each logic cell.

Abstract: A selectably customizable semiconductor device including a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis, a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, the second axis being generally perpendicular to the first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of the first and second metal layers overlap in electrical insulating relationship;the second metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of the second elongate strips, each of the fusible conductive bridges including first and second fusible links;a via being defined between the first and second metal layers at a location along each of the fusible conductive strips intermediate the first and second fusible links;the fusible conductive bridges

Abstract: A controlled slew rate buffer is disclosed which comprises a driver receiving voltage along a voltage supply line and includes feedback apparatus which senses the noise level along the voltage supply line and slows the speed of the buffer when the noise level passes a given threshold. The driver comprises at least one of (1) first and second VSS voltage sources and (2) first and second VDD voltage sources.

Abstract: A selectably customizable semconductor device including a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis, a second metal layer disposed in a second plane generally parallel to and electrically insulated from the first plane and including second elongate strips extending parallel to a second axis, the second axis being generally perpendicular to the first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of the first and second metal layers overlap in electrical insulating relationship, the first metal layer including a plurality of fusible conductive bridges joining adjacent pairs of the first elongate strips, the fusible conductive bridges including first and second fusible links, the first metal layer also including a plurality of branch strips, each branch strip connecting one of the fusible conductive bridges at a location intermediate the first and second fusible links to a branch o

Abstract: A selectably customizable semiconductor device first and second metal layers disposed in respective first and second planes and including respective first and second elongate strips, conductive branches being provided in association with the elongate strips.