Abstract: An electrochemical cell and method for electrowinning a variety of multivalent metals including titanium is described. In one aspect, the invention provides an electrochemical cell comprising an anolyte chamber comprising an anode and configured for containing an anolyte, a catholyte chamber comprising a cathode and configured for containing a catholyte comprising a metal to be electrolytically produced, and a diaphragm separating the anolyte chamber and the catholyte chamber, the diaphragm configured to control the potential drop across the diaphragm so that it is below the potential difference required for inducing bipolarity at the diaphragm.

Abstract: The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate.

Abstract: The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate.

Abstract: The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate.

Abstract: The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate.

Abstract: The present invention provides a method for preparing an implantable, medical device having at least one radioactive metallic surface. The method comprises the steps of depositing a radioactive metal layer onto the surface of the device. The metal layer comprises a radioactive metal that emits beta particles and that has a half-life of between 2 hours and 7 days and a maximum beta energy of between 0.7 and 2.3 MeV. In one embodiment, the radioactive layer is deposited by electroplating the radioactive metal and a carrier metal onto the metallic surface. In another embodiment, the method further comprises the step of electroplating a second metallic layer comprising a barrier metal onto the radioactive metal layer. The present invention also provides an implantable medical device comprising a surface having a metallic surface comprising a radioactive metallic coating thereon. The coating comprises a radioactive layer comprising a radioactive metal that emits beta-particles.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyalkylene glycols (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 10 ppm to about 2000 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.1 ppm to about 1000 ppm of the plating solution. The plating solution may be further improved by adding 2-amino-5-methyl-1,3,4-thiadiazole which is used at concentrations from 0 ppm to about 20 ppm of the plating solution.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, ie., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate.

Abstract: The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seeded semiconductor substrates having sub-micron, high aspect ratio features. The invention provides an electrochemical deposition cell comprising a substrate holder, a cathode electrically contacting a substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive a substrate plating surface and an anode electrically connect to an electrolyte. Preferably, a vibrator is attached to the substrate holder to vibrate the substrate in at least one direction, and an auxiliary electrode is disposed adjacent the electrolyte outlet to provide uniform deposition across the substrate surface.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: A method for preparing a radioactive, implantable, medical device is provided. The method involves depositing a layer of a radioactive metal that emits beta particles and that has a half-life of between 2 hours and 7 days and a maximum beta energy of between 0.7 and 2.3 MeV onto a metallic surface of the device. In one embodiment, the radioactive metal and a carrier metal are electroplated onto the metallic surface. In another embodiment, a second metallic layer comprising a barrier metal is electroplated onto the radioactive metal layer. A medical device having a metallic surface with a radioactive metallic coating thereon is provided. In one embodiment, the coating comprises a radioactive layer comprising a radioactive metal that emits beta-particles and that has a half-life of between 2 hours and 7 days and an energy level of from about 0.7 MeV to 2.3 MeV and a carrier metal. In another embodiment, the coating further comprises a second layer deposited on the radioactive layer.

Abstract: The surface of an electrically conductive substrate is electrolytically modulated to a predetermined profile by subjecting the surface to electrodeposition or electrodissolution through ionically conductive body portions of an ionic conductance resist which masks the surface. The rate of passage of ionic species to or from any given point along the masked surface is controlled by the trans-resist ionic conductance or resistance at that point. The predetermined surface profile is generated by providing the resist with a trans-resist ionic conductance or resistance profile which patterns the predetermined surface profile.

Abstract: The invention is a process for rapidly electroplating certain metals such as gold, nickel, tin-nickel and tin-lead alloys on contact fingers for electronic printed wiring boards. Particularly important is uniform distribution of current amongst the fingers so as to produce uniform metal platings with equal thickness. Also of importance is the provision to alter thickness among the individual fingers so as to plate metal where most needed for particular applications. Uniform and rapid plating are achieved by certain circuit designs together with high parallel flow rates of electroplating solution in the electroplating cell. Both electroplating uniformity and provision for selecting thickness for individual fingers permits savings in amounts of metal used without sacrifices in performance. This is particularly important in the case of gold electroplating because of the high cost and increasing use of gold.

Abstract: A method of electroplating precious metal in localized areas. The deposits obtained are usually nonuniform and limited to only those areas where coating is actually required thus offering considerable economic savings. The method uses shaped anodes approaching the cathodes very closely, high parallel flow rates of electrolyte and high current densities of at least 100 milliamperes per cm..sup.2 in order to electroplate the precious metal quickly. The preferred precious metal is gold. The method is applied to the coating of electronic circuits and components such as connectors and switches.

Abstract: The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seeded semiconductor substrates having sub-micron, high aspect ratio features. The invention provides an electrochemical deposition cell comprising a substrate holder, a cathode electrically contacting a substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive a substrate plating surface and an anode electrically connect to an electrolyte. Preferably, a vibrator is attached to the substrate holder to vibrate the substrate in at least one direction, and an auxiliary electrode is disposed adjacent the electrolyte outlet to provide uniform deposition across the substrate surface.