Abstract: In an insulated gate field effect transistors having two gate electrodes, the drain-source current can be controlled by voltages applied at the two gate electrodes. Changes in the input voltage at one gate electrode are accompanied by a change in the input capacitance at the other gate electrode causing a change in load impedance for the source controlling this gate electrode which can give rise to undesirable reactions on the source. A source resistance in the form of a voltage divider has a tap which is connected to the second gate electrode. By proper dimensioning of the voltage divider, the gate-source voltage at the first gate electrode can be made to change, in the event of a change in the input voltage applied to the second gate electrode, by an amount sufficient to counteract any undesirable change in the input capacitance at the first gate electrode.