Abstract: An organic vapor jet printing (OVJP) device is provided that includes an OVJP print die having one or more delivery channels to deliver organic material and carrier gas to a region below the print die and one or more exhaust channels to remove material from below the print die. A directly-heated delivery line connected to the one or more delivery channels and a source of the organic material external to the OVJP print die includes a resistive material and a plurality of electrical connections to the resistive material. When a current is applied to the resistive material via the plurality of electrical connections, the resistive material heats the interior of the directly-heated delivery line.

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.

Abstract: Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

Abstract: A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.

Abstract: A supporting system for a heating element includes a supporting member and a base member. The supporting member has a main extension direction extending substantially in a height direction and a proximal and distal end. The proximal end is adapted to support the heating element. The base member is connected via at least one hinge to a distal portion of the supporting member which distal portion is arranged distal from the proximal end. The supporting member is pivotable relative to the base member about a rotation axis which is oriented parallel to a substantially rigid direction.

Abstract: A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.

Abstract: An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates.

Abstract: A support system for supporting a heating element is formed with a supporting member and a resilient system. The supporting member has a main extension direction extending substantially in a height direction and a proximal and distal end. The proximal end is adapted to support the heating element. The resilient system includes a spring element, which is coupled to a distal portion of the supporting member and provides resiliency of the supporting member in a resilient direction and substantially restricts movements of the supporting member in a rigid direction. Furthermore, the resilient system extends at least partially from the distal portion in the height direction towards the proximal end.

Abstract: Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

Abstract: Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

Abstract: A supporting system for a heating element includes a supporting member and a base member. The supporting member has a main extension direction extending substantially in a height direction and a proximal and distal end. The proximal end is adapted to support the heating element. The base member is connected via at least one hinge to a distal portion of the supporting member which distal portion is arranged distal from the proximal end. The supporting member is pivotable relative to the base member about a rotation axis which is oriented parallel to a substantially rigid direction.

Abstract: A support system for supporting a heating element is formed with a supporting member and a resilient system. The supporting member has a main extension direction extending substantially in a height direction and a proximal and distal end. The proximal end is adapted to support the heating element. The resilient system includes a spring element, which is coupled to a distal portion of the supporting member and provides resiliency of the supporting member in a resilient direction and substantially restricts movements of the supporting member in a rigid direction. Furthermore, the resilient system extends at least partially from the distal portion in the height direction towards the proximal end.

Abstract: A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained.

Abstract: A method of in-situ pyrometer calibration for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of positioning a calibrating pyrometer at a first calibrating position and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating the support element about the rotational axis, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer installed at a first operating position, and obtaining first calibrating temperature measurements from the calibration pyrometer. Both the calibrating pyrometer and the first operating pyrometer desirably are adapted to receive radiation from a first portion of a wafer support element at a first radial distance from a rotational axis of the wafer support element.

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.